Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

TCAD Simulations of Silicon Sensors at HL-LHC Conditions

Not scheduled
15m
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München

Speaker

Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))

Description

Radiation-induced damage in silicon can be modeled in TCAD simulations through effective states in the energy gap,
what we call radiation damage models.
After a brief introduction about radiation-induced damage in silicon, in this talk I will present you some of the available
radiation damage models, how to implement them in TCAD tools and what are typical observables you can study in simulations.
I will also comment on some issues related to annealing and charge collection efficiency.
To conclude I will try to present the outlook for radiation-induced damage studies with TCAD simulation tools.

Primary author

Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))

Presentation materials

There are no materials yet.