Speaker
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Description
Low Gain Avalanche Diodes (LGAD) with different implantation dose and irradiated with 24 GeV/c protons at CERN-PS up to a fluence of 1e14 1 MeV neutron equivalent will be presented. The results of these measurements support the interpretation of a double junction effect as the primary responsible for the reduction of gain observed in these devices. The shape and magnitude of electric field was calculated profiting from the point-like spatial resolution of this technique. This method was also applied to PIN diodes of different runs.
Authors
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Raul Montero
(UPV/EHU)
