Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

Two Photon Absorption-TCT of irradiated LGADs

Not scheduled
15m
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München

Speaker

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

Description

Low Gain Avalanche Diodes (LGAD) with different implantation dose and irradiated with 24 GeV/c protons at CERN-PS up to a fluence of 1e14 1 MeV neutron equivalent will be presented. The results of these measurements support the interpretation of a double junction effect as the primary responsible for the reduction of gain observed in these devices. The shape and magnitude of electric field was calculated profiting from the point-like spatial resolution of this technique. This method was also applied to PIN diodes of different runs.

Primary authors

Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES)) Marcos Fernandez Garcia (Universidad de Cantabria (ES)) Michael Moll (CERN) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Raul Montero (UPV/EHU)

Presentation materials

There are no materials yet.