Speaker
Marco Meschini
(Universita e INFN, Firenze (IT))
Description
The talk will report on the INFN research activity, in collaboration with FBK foundry, which is aiming at the development of new, thin, n-in-p pixel sensors for the CMS HL-LHC (Phase-2) upgrade. The talk will illustrate the main aspects of the research program, starting from the sensor design and fabrication technology, with an overview on next plans using both Direct Wafer Bonded (DWB) and Silicon On Insulator (SOI) wafers. The INFN RD covers both planar and columnar 3D pixel devices. Hybrid modules with R&D sensors connected to the PSI46dig readout chip have been tested on beam test experiments: recent results on planar Active Edge devices, with peripheral staggered trenches, and 3D pixel sensors will be reported.
Author
Marco Meschini
(Universita e INFN, Firenze (IT))
Co-authors
Gian Franco Dalla Betta
(Universita degli Studi di Trento (IT))
Alberto Messineo
(INFN Sezione di Pisa, Universita' e Scuola Normale Superiore, P)
Lorenzo Viliani
(Universita e INFN, Firenze (IT))
Dr
Mauro Dinardo
(Universita & INFN, Milano-Bicocca (IT))
Davide Zuolo
(Universita & INFN, Milano-Bicocca (IT))
