Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

Radiation-hard passive CMOS-sensors

Not scheduled
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München


David-Leon Pohl (University of Bonn (DE))


The utilization of radiation-hard CMOS processes for sensors of hybrid pixel-detectors is investigated. The benefit of such an approach is industrial sensor fabrication on large wafers with potential high throughput and yield, and low costs. Further, CMOS processes offer multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Passive CMOS-sensors with $50$ x $250\,\mathrm{\mu m}^2$ pixels are investigated in view of the ATLAS pixel­-detector upgrade. They are thinned to $300\,\mathrm{\mu m}$ and $100\,\mathrm{\mu m}$, backside processed, and read out with the ATLAS FE-I4. Break-down behavior, yield, and hit-detection efficiency after irradiation to $1.1 \cdot 10^{15} \mathrm{N_{eq}/cm^2}$ are discussed. The influence of AC-coupling and a small collection node on capacitance and hit efficiency is also investigated. Preliminary findings for $50$ x $50\,\mathrm{\mu m}^2$ pixel-sensors compatible with future pixel readout-chips are presented.

Primary authors

David-Leon Pohl (University of Bonn (DE)) Tomasz Hemperek (University of Bonn (DE))


Ivan Dario Caicedo Sierra (University of Bonn (DE)) Mr Daniel Coquelin (University of Bonn (DE)) Michael Daas (University of Bonn (DE)) Laura Gonella (University of Birmingham (UK)) Fabian Huegging (University of Bonn (DE)) Jens Janssen (University of Bonn (DE)) Hans Krueger (University of Bonn (DE)) Anna Macchiolo (Max-Planck-Institut fur Physik (DE)) Nikolaus Owtscharenko (University of Bonn (DE)) Norbert Wermes (University of Bonn (DE))

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