Speaker
Description
For operation at the High Luminosity LHC, the ATLAS detector will be upgraded in 2025-2026. Its Inner Detector will be replaced by an all-silicon tracking system called the Inner Tracker (ITk), consisting of an inner pixel detector of five layers and an outer strip detector. This detector will cope with the harsher radiation environment and the higher pile-up of collisions.
Sensors produced in the High Voltage CMOS (HV-CMOS) process are considered for the outer layers of the pixel detector. Since HV-CMOS allows for a monolithic design, the material budget in ITk can be reduced and the production is simplified since no additional front-end board to be bonded to the sensors is necessary. A study of the radiation hardness of prototype HV-CMOS sensors will be presented in this talk. In particular, a characterisation of the depletion depth with the Transient Current Technique will be shown. The study covers the performance before and after proton irradiation with fluences up to $1.5 \cdot 10^{15}$ 1 MeV n$_\text{eq}$. Two proton beams with different energies were exploited for the studies. The irradiation with protons of 24 GeV was performed at the CERN Proton Synchrotron, while an irradiation with 16.7 MeV protons was done at the Bern Cyclotron.
