Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

Characterization of acceptor removal in epitaxial silicon pad diodes

Not scheduled
15m
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München

Speaker

Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))

Description

The so-called acceptor removal effect has been studied on a set of p-type silicon sensors irradiated with protons and neutrons up to 7E15 neq/cm2. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm.cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um). CV, IV and TCT measurements were performed to extract the effective doping concentration of these devices. TCT collected charge vs voltage was used to evaluate the sensor's bulk space charge, providing evidence of type inversion in low resistivity p-type silicon sensors when irradiated by protons. Additionally, defect spectroscopy was conducted using TSC technique in order to study the correlation between BiOi concentration and acceptor removal. The Neff vs fluence plots were fitted, from which acceptor removal rate parameters were extracted.

Primary authors

Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT)) Yana Gurimskaya (CERN) Isidre MATEU (CERN) Michael Moll (CERN) Marcos Fernandez Garcia (Universidad de Cantabria (ES))

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