Speaker
Dr
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
Description
Transient Current Techniques (TCT) based on laser-induced currents produced by Single Photon Absorption (SPA) processes in the sensor substrate have been used extensively to study the electric field distribution of irradiated silicon sensors. A new laser-based Transient Current Technique is introduced here for the first time where the free charge carriers are created in a Two Photon Absorption (TPA) process induced by a focused femto-second laser pulse with a wavelength of 1300nm. The fact that in a TPA process the absorption of the light depends on the square of the intensity of the light beam used for the current generation allows to create very localized TPA-induced electron-hole pairs and opens the possibility to carry out a 3D mapping of the sensor's electric field with micrometric resolution. A first proof-of-concept measurement is presented in this talk.
Primary authors
Francisco Rogelio Palomo Pinto
(U)
Dr
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Michael Moll
(CERN)
Pablo De Castro Manzano
(Universidad de Cantabria (ES))
Raul Montero
(University of the Basque Country)
