11th "Trento" Workshop on Advanced Silicon Radiation Detectors

22 Feb 2016, 13:00 → 24 Feb 2016, 19:15 Europe/Zurich

Amphitheatre de recherche George Charpak (LPNHE)

Gian-Franco Dalla Betta (University of Trento and INFN), Giovanni Calderini (Centre National de la Recherche Scientifique (FR))

Continuing in its tradition, the goal of the workshop is to bring together experts on sensor technology (design and processing), front-end electronics, system issues, detector applications (e.g., particle tracking, medical and biological imaging), etc. for discussions of the present state of the art, establishment of requirements of the fields  and future programs.
 
The workshop will consist of invited talks and contributed presentations, with ample time for discussions.

The workshop is organised with the financial support of ILP (Institute Lagrange de Paris) and  LPNHE (Laboratoire de Physique Nucleaire de Hautes Energies).

 

acces_pieton.pdf

liste_des_hotels.pdf

Monday 22 February ¶

13:00 → 14:00 Registration and coffee

14:00 → 15:45 Introduction¶

14:00 Welcome¶

Speaker: Giovanni Calderini (Centre National de la Recherche Scientifique (FR))

14:05 Practical information¶

Speakers: Giovanni Marchiori (LPNHE Paris), Marco Bomben (Centre National de la Recherche Scientifique (FR))

workshop practical information.pdf

14:20 Progress in Ultra-Fast Silicon Detectors¶

Speakers: Hartmut Sadrozinski (SCIPP, UC santa Cruz), Hartmut Sadrozinski (University of California,Santa Cruz (US))

Trento-75um LGAD Beta.pdf

Trento-75um LGAD Beta.pptx

14:40 Tracking in 4 dimensions¶

Speaker: Nicolo Cartiglia (Universita e INFN Torino (IT))

Cartiglia_4D_Paris.pdf

15:00 Electric field, mobility and trapping in Si detectors irradiated with neutrons and protons up to 1e17 n_eq/cm^2¶

Speaker: Marko Mikuz (Jozef Stefan Institute (SI))

Field-mobility-Trento-Feb16.pdf

15:20 3D Sensors for the HL-LHC¶

Speaker: Sebastian Grinstein (IFAE - Barcelona (ES))

sgrinstein_Trento_2016.pdf

15:45 → 16:15 Coffee Break

16:15 → 18:00 Planar 1¶

Convener: Marko Mikuz (Jozef Stefan Institute (SI))

16:15 Recent results with hybrid pixel assemblies for the CLIC vertex detector¶

Speakers: Andreas Matthias Nurnberg (CERN), Andreas Matthias Nurnberg (Inst. fuer Experimentelle Kernphys.-Universitaet Karlsruhe-Karl)

20160222_trento_nurnberg.pdf

16:35 Silicon pixel tracking detector with ultra-precise time resolution¶

Speaker: Massimiliano Fiorini (Universita di Ferrara & INFN (IT))

Fiorini-TrentoWorkshop-2016.pdf

16:55 X-rays characterisation of pixelated silicon detectors¶

Speaker: Dr Dima Maneuski (University of Glasgow (GB))

220216-maneuski-XraysTrento.pdf

220216-maneuski-XraysTrento.pptx

17:15 The Belle II SVD Origami Modules¶

Speaker: Antonio Paladino (INFN - National Institute for Nuclear Physics)

Paladino_The_BelleII_SVD_Origami_modules.pdf

17:35 Beam test results of highly irradiated planar and 3D pixel sensors for the Phase II Upgrade of the CMS pixel detector¶

Speaker: Daniel Schell (KIT - Karlsruhe Institute of Technology (DE))

schell_trento16_final.pdf

Tuesday 23 February ¶

09:00 → 10:30 HVCMOS 1¶

Convener: Gregor Kramberger (Jozef Stefan Institute (SI))

09:00 Charge Collection Properties of depleted Monolithic Active Pixel Sensors¶

Speaker: Malte Backhaus (CERN)

BackhausCmosChargeCollection.pdf

09:20 Development of passive pixel sensors using a commercial 150nm CMOS technology on high resistivity silicon¶

Speakers: Fabian Huegging (Universitaet Bonn (DE)), Fabian Huegging (University of Bonn)

LFsensor_trento2016.pdf

09:40 Monolithic CMOS ASIC Developments¶

Speaker: Pietro Caragiulo (SLAC)

Caragiulo.pdf

Caragiulo.pdf

Caragiulo.pptx

10:00 The first reticle size HV-CMOS sensor demonstrator for ATLAS pixel layers¶

Speaker: Ivan Peric (KIT - Karlsruhe Institute of Technology (DE))

Tredi2016_IvanPeric.pdf

Tredi2016_IvanPeric.pptx

10:30 → 11:00 Coffee Break

11:00 → 12:30 Technology¶

Convener: Maurizio Boscardin (FBK Trento)

11:00 The impact and persistence of static surface charges on differently passivated silicon strip sensors¶

Speaker: Dr Axel Koenig

TrentoMeeting_Koenig.pdf

TrentoMeeting_Koenig.pptx

11:20 New pixel technologies for HL-LHC¶

Speaker: Andrea Gaudiello (Universita e INFN Genova (IT))

Trento_2016_Gaudiello.pdf

11:40 Detector development at the Paul-Scherrer-Institut (PSI)¶

Speaker: Dominic Greiffenberg (PSI - Paul Scherrer Institute)

DetectorsPSI_Greiffenberg_Trento2016Workshop_23Feb2016.pdf

12:00 Reverse bias current characterisation of silicon strip sensors and shallow radiation damage generation¶

Speaker: Sven Wonsak (University of Liverpool (GB))

Trento-2016_Wonsak.pdf

12:30 → 14:00 Lunch Break

14:00 → 15:45 HVCMOS 2¶

Convener: Cinzia Da Via (University of Manchester (GB))

14:00 TCT measurements of HV-CMOS test structures irradiated with neutrons¶

Speaker: Igor Mandic (Jozef Stefan Institute (SI))

Trento2016_Mandic.pdf

Trento2016_Mandic.pptx

14:20 Investigation on the radiation resistance of HV-CMOS and pin diodes using a Transient Current Technique based on the Two-Photon-Absortion Process¶

Transient Current Techniques (TCT) based on laser-induced photo-currents produced by Single Photon Absorption (SPA) processes have been extensively used during the last two decades as a powerful tool to study many of the properties relevant to operation of semiconductor detectors. Very recently, an innovative Transient Current Technique was introduced where the free charge carriers are created in a Two-Photon-Absorption (TPA) process induced by a focused femto-second laser pulse with a wavelength of 1300nm. The fact that in a TPA process the absorption of the light depends on the square of the intensity of the light beam used for the current generation allows a localized TPA-induced electron-hole pair creation in a micrometric scale voxel centered on the laser waist. As a consequence, this new technique opens the possibility to carry out a 3D mapping of the sensor’s space-charge properties with micrometric resolution. Due to its intrinsic spatial resolution, the TPA-TCT technique should be a very appropriate choice for the characterization of the alterations of the sensor’s active (charge collecting) volume induced by radiation damage and especially for the case of partially depleted sensors as it is the case of the carrier collecting n-well implemented in HV-CMOS sensors.

Speaker: Ivan Vila Alvarez (Universidad de Cantabria (ES))

20160222_TRENTO_IvanVila2.pptx

14:40 SPS Test Beam characterisation results with CCPDv4 capacitively coupled to FEI4¶

Speaker: Francesco Armando Di Bello (Universite de Geneve (CH))

CMOS_Trento.pdf

CMOS_Trento.pdf

CMOS_Trento.pptx

15:45 → 16:15 Coffee Break

16:15 → 18:00 Planar 2¶

Convener: Marco Bomben (Centre National de la Recherche Scientifique (FR))

16:15 Pixel Sensor Development for the LHCb VELO Upgrade¶

Speakers: Asmund Schiager Folkestad (Norwegian University of Science and Technology (NO)), Åsmund Folkestad

VELO_Trento.pdf

16:35 The Phase 1 upgrade of the CMS pixel detector¶

Speaker: Viktor Veszpremi (Wigner RCP, Budapest (HU))

Trento_Veszpremi_20160223_final.pdf

16:55 Results on thin n in p Planar Pixels from INFN R&D¶

Speaker: Marco Meschini (Universita e INFN, Firenze (IT))

MMeschini-11thTrento_WS-6cmp.pdf

17:15 Characterisation of thin irradiated epitaxial silicon sensors for the CMS phase II pixel upgrade¶

Speaker: Matteo Centis Vignali (Hamburg University (DE))

presTrento.pdf

17:35 The upgraded ATLAS Pixel detector and its performance during run-2 in 2015¶

Speaker: Didier Ferrere (Universite de Geneve (CH))

Trento-PixelOverview.pdf

Trento-PixelOverview.pptx

19:15 → 23:30 Conference Dinner

Wednesday 24 February ¶

09:00 → 10:30 Planar 3¶

Convener: Abdenour Lounis (Laboratoire de l'Accelerateur Lineaire (FR))

09:00 Latest development in HPK/KEK n+-in-p planar pixel sensors for very high radiation environments¶

Speaker: Yoshinobu Unno (High Energy Accelerator Research Organization (JP))

160224_UnnoPixelJapan.pdf

160224_UnnoPixelJapan.pptx

09:20 Study of New ADVACAM Active Edge Sensor Technology for ATLAS Upgrade¶

Speaker: Tasneem Rashid (Laboratoire de l'Accelerateur Lineaire (FR))

Trento_2016.pdf

09:40 Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade¶

Speaker: Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))

trento_lpnhe.pdf

10:00 Initial results from the electrical characterisation of planar p-on-n sensors with active/slim-edge for the next generation of FELs¶

Speakers: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT)), Gian-Franco Dalla Betta (INFN and University of Trento)

PixFEL.pdf

10:30 → 11:00 Coffee Break

11:00 → 12:30 LGAD¶

Convener: Hartmut Sadrozinski (SCIPP, UC santa Cruz)

11:00 Status of LGAD CNM fabrications¶

Speakers: Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

Pellegrini_LGAD_Trento.pdf

11:20 Low Gain Avalanche Detectors TCAD Radiation Damage Analysis¶

Where we present our last results on radiation damage analysis of Low Gain Avalanche Detectors using the Synopsys TCAD suite and different well established radiation damage models. Our main conclusions point to this device could work reasonably well up to ~1e14 n_eq/cm2.

Speakers: Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES)), Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

25Feb16LGADTrentoWkshop_Rogelio.pdf

25Feb16LGADTrentoWkshop_Rogelio.pptx

11:40 First Inverted Low Gain Avalanche Detector fabrication at IMB-CNM¶

Speaker: Maria del Mar Carulla Areste (Instituto de Microelectronica de Barcelona IMB-CNM)

20160222_Trento_Workshop_iLGAD.pdf

12:00 Low Gain Avalanche Diode gallium process flow simulation studies¶

Speaker: Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

Trento 2016.pdf

12:30 → 14:00 Lunch Break

14:00 → 15:45 3D¶

Convener: Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))

14:00 Status of 3D detector activities at CNM¶

Speakers: Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))

Pellegrini_3D_Trento.pdf

14:20 Beam test results of irradiated 3D pixel sensors for the CMS-TOTEM Precision Proton Spectrometer¶

Speaker: Fabio Ravera (Universita e INFN Torino (IT))

Fabio_Ravera_Presentation.pdf

14:40 Initial results from a new generation of 3D Sensors for HL-LHC¶

Speakers: Maurizio Boscardin (FBK Trento), Maurizio Boscardin (Unknown)

TREDI2016 Boscardin.pdf

15:00 Charaterization of 3D module with micro-channel cooling¶

Speaker: Cinzia Da Via (University of Manchester (GB))

DaViaTrentoW.pdf

15:45 → 16:15 Coffee Break

16:15 → 17:45 TCAD¶

Conveners: Giovanni Marchiori (LPNHE Paris), Luciano Bosisio (Universita e INFN (IT))

16:15 TCAD simulations of High-Voltage-CMOS pixel structures for the CLIC vertex detector¶

Speaker: Matthew Daniel Buckland (University of Liverpool (GB))

MBuckland_TCAD_Trento2016.pdf

16:35 Validation strategy for the simulation of highly irradiated silicon pixel sensors¶

Speaker: Joern Schwandt (Hamburg University (DE))

js_Trento2016.pdf

16:55 TCAD simulations of LGAD devices using Silvaco software¶

Speaker: Marco Bomben (Centre National de la Recherche Scientifique (FR))

bomben_LGAD_simulation_studies_160224.pdf

bomben_LGAD_simulation_studies_160224.ppt

17:15 Comprehensive radiation damage test and modelling of p-type silicon detectors for high-luminosity operations¶

Speaker: Arianna Morozzi (Universita e INFN, Perugia (IT))

TrentoWorkshopMorozzi.pptx

17:45 → 18:00 Conference closing¶

sim_school_announcement.pdf

sim_school_announcement.ppt

17:45 Close-out¶