13th "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

Radiation Hardness

20 Feb 2018, 17:00

Max-Planck-Institut für Physik, Munich

119. Radiation hardness study of HV-CMOS sensors using Transient Current Technique

Armin Fehr (CERN, University of Bern)

20/02/2018, 17:00

117. Characterization of acceptor removal in epitaxial silicon pad diodes

Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))

20/02/2018, 17:15

134. edge-TCT results from AMS HV-CMOS test chips irradiated with 800 MeV protons

Daniel Muenstermann (Lancaster University (GB))

20/02/2018, 17:30