In this work, we present models to simulate two performance parameters for silicon photomultipliers (SiPMs) in Complementary Metal-Oxide Semiconductor (CMOS) technology: Photon Detection Probability (PDP) and Dark Count Rate (DCR). These models were developed to comply with the specifications of SiPM which is applicable to scintillation detectors. These two characteristics are important parameters that affect the photon number resolving capability of the scintillation detector, and are in a trade-off relationship with each other . It is essential to predict the values of these parameters at the design stage. The PDP and DCR models were devised on the basis of Technology Computer-Aided Design (TCAD) simulations and Matlab routines. The doping profile for the n-on-p structure was determined through case analyses by employing these models. The simulation results will be compared with the experimental results performed for the 350 nm to 850 nm wavelength range and four different over-voltages. Our work provides an effective way to optimize the SiPM design by considering the trade-off relationship appropriately.