June 27, 2021 to July 1, 2021
Europe/Brussels timezone

Characterization of the ePixM monolithic CMOS sensor for soft X-rays

Jun 29, 2021, 3:40 PM
Zoom (Online)



Oral presentation Sensor Materials, Device Processing & Technologies Oral presentations


lorenzo rota (Stanford University)


ePixM is a charge-integrating pixel detector which is being developed for soft X-rays experiments at LCLS-II. To enable single-photon detection with photon energies down to 250 eV, a monolithic active pixel sensor has been designed on a CMOS 150 nm process with a high-resistivity substrate [1]. The sensor is fully depleted, so charges are collected by drift. The back-side of the wafers has been post-processed at SLAC to form a thin entrance window [2]. Small-scale devices, consisting of 48x48 pixels, have been mounted on a dedicated carrier board, as shown in Figure 1. The response of the pixel circuitry has been measured with a calibration signal injected at the pixel input, as shown in Figure 2, as well as with an Fe55 source. Both the automatic gain-switching capability and the correlated pre-charging technique are functional. A readout noise of 16 electrons has been measured with the devices operated at room temperature. The performance of the sensor and of the readout electronics will be presented.

Primary authors

Chris Kenney (SLAC) Angelo Dragone (SLAC National Accelerator Laboratory (US)) Julie Segal (SLAC) Jasmine Hasi (SLAC National Accelerator Laboratory (US)) Maciej Kwiatkowski (SLAC National Accelerator Laboratory) lorenzo rota (Stanford University)

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