18th RD50 Workshop (Liverpool)
→
Europe/Zurich
Liverpool
Liverpool
University of Liverpool Conference Office
The Foresight Centre
1 Brownlow Street
Gianluigi Casse
(Department of Physics),
Michael Moll
(CERN)
Description
18th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders
Participants
Adrian Driewer
Alexander Dierlamm
alexandra junkes
Andre Rummler
Andreas Nuernberg
Anna Macchiolo
Anthony Affolder
Celeste Fleta
Dean Forshaw
DEHIMI Lakhdar
Donato Creanza
Eckhart Fretwurst
Eija Tuominen
Elena Verbitskaya
Eugenijus Gaubas
Francisca Munoz Sanchez
Gianluigi Casse
Giulio Pellegrini
Gregor Kramberger
Hartmut Sadrozinski
Igor Mandić
Irena Dolenc Kittelmann
Jan Bohm
Jennifer Sibille
Jiaguo Zhang
Jiri Popule
Joachim Erfle
Juozas Vaitkus
Manuel Lozano Fantoba
Mara Bruzzi
Marko Mikuž
Marko Milovanovic
Markus Gabrysch
Michael Moll
Michael Solar
Miguel Ullan
Nicola Pacifico
Panja-Riina Luukka
Petr Masek
Philip Patrick Allport
Philipp Weigell
Richard Bates
Robert Eber
Roger Caminal Armadans
Röder Ralf
Salvatore My
Thomas Poehlsen
Tilman Rohe
Ulrich Parzefall
Vaclav Vrba
Vladimir Eremin
Werner Schustereder
Zheng Li
Support
-
-
Defect and Material CharacterizationConvener: Mara Bruzzi (Dipartimento di Fisica)
-
3
Some aspects of proton implantation and subsequent thermal annealingIn contrast to the well known physics of conventional ion doping the situation for hydrogen seems to be quite different. The implantation of hydrogen induces crystal damage into the Si matrix. These defects are decorated by the hydrogen itself after a soft anneal and thereby a donator complex is build. We investigated those defects and complexes with the aim of acquiring a better physical understanding of them and their changes under certain variable parameters. In particular, the impact of implantation dose variations, annealing temperature and annealing time on crystal defects and doping concentration mainly in FZ material were examined. A wide variation of techniques including Doppler broadening, the highly sensitive positron annihilation spectroscopy and low temperature lifetime spectroscopy measurements down to 10 K were used along with electrical methods like spreading resistance profiling. In order to de-couple crystal defects originating directly from proton implantation also experiments utilizing co-implantation with He followed by hydrogen treatment were carried out. The proton irradiation induced defects perform a gettering function for impurities, strongly influence the diffusion of oxygen and hydrogen itself and serve as thermal donor formation-centers. A major finding is that different donor states are build predominantly as function of the annealing temperature. The complexes are stable within certain annealing temperature ranges and populate different energy levels in the Si band gap. Ultimately, about 10-4 donors are created for every radiation-induced Frenkel defect. One main focus of the investigation is the dependency of the donor introduction efficiency on the ion dose and the annealing temperature. The position and shape of the damage profile will be discussed in view of the different preparation methods. We were also able to detect shallow traps in Czochralski silicon after specific annealing processes, and its corresponding temperature dependence of the trapping rate. The latter was found to be positron de-trapping from extended Rydberg states.Speaker: Dr Werner Schustereder (Infineon Austria)
-
4
Deep level system Gaussian approximation according the extrinsic photoconductivity in irradiated Si diodes.The WODEAN Si samples photoconductivity spectra were measured keeping the constant intensity of light at different wavelengths at low and medium temperatures. The deep level contribution was analysed by Lucovsky model proposing the Gaussian distribution of local level energies that followed from the preliminary results presented in the previous RD50 workshops. The time dependencies of photo-response at different excitation wavelength and TSC are presented and analyzed.Speaker: Prof. Juozas Vaitkus (Inst. of Appl. Res. (IAR) - Vilnius University)
- 5
-
6
Influence of material defects on the electrical properties of test-diodes for future cms tracking detectorsA large number of silicon sensors was ordered for a comprehensive study of the radiation hardness of test structures for future CMS detectors. Of those materials the unirradiated Float Zone sensors exhibit unexpected electrical properties studied by capacitance-voltage and current-voltage characteristics (CV-IV). The properties observed in this material can be explained by material defects introduced during the production process. A characterisation of the crystal defects was carried out by means of Deep Level Transient Spectroscopy (DLTS).Speaker: alexandra junkes (Hamburg University)
-
7
Measurement of detrapping times in irradiated silicon detectorsThe TCT was exploited in a new way for measuring de-trapping times in irradiated silicon detectors. The method is based on measurements of the collected charge as a function of integration time on time scale much longer than drift times, which required acquisition of current waveforms on the time scale of few micro-seconds. The analysis of the data and first results will be presented. The preliminary measurements with irradiated n-type MCz diodes revealed that de-trapping times of holes are of order few micro-seconds and much shorter than those of electrons. The temperature dependence of de-trapping times can be exploited for estimation of energy levels responsible for trapping.Speaker: Gregor Kramberger (Jozef Stefan Institute)
-
15:20
Coffee break
-
8
Study of Surface Radiation Damage in Silicon SensorsThe surface radiation damage of 12 keV X-rays on silicon test structures fabricated on high-ohmic n-type silicon and on strip sensors is investigated. At these X-ray energies no bulk damage in silicon is expected. However fixed oxide charges in the SiO2/Si3N4 layer and interface traps at the Si-SiO2 interface build up. Using TDRC (Thermally Dielectric Relaxation Current) and C-V and G-V (Capacitance-Voltage, Conductance-Voltage) measurements we investigate as function of X-ray dose the microscopic defects in test structures with different crystal orientations and compare the results to the macroscopic properties of strip sensors as obtained from C-V and I-V measurements. Due to the irradiation the density of positive oxide charges increases and three dominant interface traps build up. The TDRC and the C/G-V results allow us to determine the energy levels and capture cross sections of the traps and the dose dependence of the trap and oxide charge densities. We find that both saturate (and even decrease) for doses above a few MGy. The annealing of the defects is studied at 70C and 80C and the activation energies for the annealing of the interface traps and the oxide charges determined. We find that the annealing times of the different trap levels are very different. For the strip sensors the radiation induced oxide charges and the interface traps increase the full depletion voltage, the surface leakage current and the inter-strip capacitances. In addition an electron accumulation layer forms at the Si-SiO2 interface whose extension increases with dose and decreases with applied voltage. This accumulation layer has a significant impact on the performance of the sensors.Speaker: Mr Jiaguo Zhang (Institute of Experimental Physics, University of Hamburg, Germany)
-
9
DMC - Discussion SessionSpeaker: Mara Bruzzi (Dipartimento di Fisica)
-
3
-
Collaboration Board MeetingConveners: Eckhart Fretwurst (II. Institut fuer Experimentalphysik), Prof. Juozas Vaitkus (Vilnius University)
-
-
Detector CharacterizationConvener: Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
-
10
The CMS HPK campaign - An overviewThis contribution gives an overview on the campaign to evaluate the planar silicon sensor options for the CMS Tracker Upgrade. This evaluation is done with one industrial supplier, which is capable to provide the large quantity of sensors needed for the Tracker volume at very high quality. Wafers are processed on various materials (FZ, MCz, Epi), with several dopings (n-type, p-type with p-spray and p-stop strip isolation) and thicknesses (50µm – 320µm). The different structures on the wafers are explained as well as the irradiation procedures and planned measurements.Speaker: Alexander Dierlamm (Inst. fuer Experimentelle Kernphysik, KIT)
-
11
CMS-HPK-Campaign: IV/CV-characteristics of the first sample of irradiated DiodesThe aim of the CMS-HPK-Campaign is to find a new Material for the HL-LHC Upgrade of the CMS-Tracker. Therefor a lot of different structures and materials is produced by HPK. A first sample of FZ Diodes of n- and p-type has been neutron and proton irradiated with 10^14 neq. Their IV/CV-characteristics will be presented.Speaker: Mr Joachim Erfle (UHH - Institut fuer Experimental Physik (UHH)-Universitaet Ham)
-
12
First CCE and TCT measurements on irradiated diodes of the CMS-HPK-CampaignIn a large campaign started by the CMS collaboration to identify the future silicon sensor technology baseline for a new tracker for the high-luminosity phase of LHC, a first set of floatzone diodes was irradiated to a fluence of 10^14neq/cm2 with protons, neutrons and mixed exposure. Measurements of leakage current, depletion voltage and charge collection efficiency with an infrared Laser on some of the irradiated diodes were made in order to get good understanding of the ordered material and to get a first impression of the material performance after irradiation. In addition, trapping times calculated with the charge correction method were gathered from TCT measurements with a red Laser for 320µm thick diodes.Speaker: Robert Eber (Institut für Experimentelle Kernphysik, KIT)
- 13
-
10:20
Coffee Break
-
14
Edge TCT and Charge Collection Efficiency study on pion irradiated n-on-p stripsSilicon n-on-p strip detectors produced by CIS, have been irradiated with pions in a fluence range 2e14pi/cm^2-1e15pi/cm^2. The irradiated detectors have been measured by means of the Edge-TCT and Alibava CCE setup, as well as standard CV/IV characterization. The detectors have shown a fairly low gc value. Investigation went in the direction of looking for correlation between the different techniques, looking for a consistency, as well as determining whether measurement temperature plays a role in the obtained results.Speaker: Nicola Pacifico (CERN & Università degli Studi di Bari)
-
15
Edge-TCT and Alibava measurements with neutron and pion irradiated micro-strip detectorsCharge collection measurements with both Edge-TCT and Alibava on neutron i pion irradiated micro-strip detectors will be presented. Edge-TCT measurements were made in reverse and forward bias and include several annealing steps at 60C (according to the standard CERN scenario), as well as different temperature and laser frequency steps.Speaker: Marko Milovanovic (Jozef Stefan Institute, Ljubljana)
-
16
Gamma irradiation induced suppression of reverse annealing in neutron irradiated MCZ Si detectorsFor the development of radiation hard Si detectors for the SiD BeamCal program for International Linear Collider (ILC), n-type MCZ Si detectors were irradiated first by fast neutrons to fluences of 1.5x10^14 and 3x10^14 neq/cm2, and then by gamma. It is found that gamma radiation has suppressed reverse annealing in neutron irradiated detectors which were subject to gamma radiation during the 5.5 month room temperature annealing (RTA). The impressive effect is that in this mixed irradiation reverse annealing is totally suppressed by the same dose of gamma (500 Mrad) regardless of the neutron fluence. The following RTA of six months showed that suppression occurs only during gamma radiation that suggests some nonlinear effect, or interaction of radiation induced acceptor-type and donor-type defects.Speaker: Dr Zheng Li (Brookhaven National laboratory)
-
17
Generation current temperature scalingTemperature dependence of the generation current is analysed using the experimental and theoretical data for intrinsic carrier concentration. It is recommended that the current is scaled with temperature by the following formula: T^2 exp(-1.21 eV/2kT) both for non-irradiated and irradiated Si detectors.Speaker: Dr Alexandre Chilingarov (Lancaster University)
- 18
-
12:40
Lunch
-
10
-
Full Detector Systems
-
19
Update on Performance of Punch-through Potection structuresWe present the results on characteristics and performance of different punch-through structures when the silicon sensors are flooded with IR radiation. WE report dependence on p-spray vs. p-stop and doping density, radiation levels and types, gate effects, and IR intensity. Punch-through protection depends on the ratio of two resistors, the bulk resistance and the asymptotic resisstance of the punch-through channel.Speaker: Hartmut Sadrozinski (SCIPP, UC santa Cruz)
-
20
Low Resistance Strip SensorsAC-coupled silicon strip sensors can get damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the PT structure leading to large voltages. The proposal aims to fabricating low-resistance strips by means of the deposition of a conducting material in contact with the implants, assuring the effectiveness of the PT structures.Speaker: Dr Miguel Ullán (CNM-IMB (CSIC), Barcelona)
-
21
CMS tracker upgrade test beam activitiesIn the SLHC experiments the performance of the tracking detectors after high radiation fluencies will be an important issue. For example the CMS strip tracker will receive fluencies up to 10^15 MeV neq, and the pixel detector factor of ten higher than that. Thus, in addition to characterizing the electrical parameters of the new radiation-hard sensors, it is very important to test their performance in the realistic conditions like in a test beam. Since 2007 a collaboration of several CMS institutes has been operating a silicon micro-strip beam telescope based on the CMS Tracker readout. So far there have been 6 test beam campaigns, the latest one including 14 FZ and 4 Epi-Si sensors from the official CMS R&D processing run from Hamamatsu. This latest test beam was performed at Fermilab with 120 GeV protons, and will serve as the baseline to which the future test beam results will be compared to. The samples were unirradiated and had two different layouts (multi-strip and multi-pixel). In addition, there were several different thicknesses for each material and sensor type.Speaker: Panja-Riina Luukka (Helsinki Institute of Physics HIP)
-
22
First measurements on mixed-irradiated mini strip sensors and outlook to Lorentz angle studies as part of the CMS-HPK CampaignAs part of the CMS-HPK Campaign, Lorentz angle measurements on irradiated mini strip sensors will be performed. For that, floatzone mini sensors of three different thicknesses and different doping type (p-in-n, n-in-p with p-stop and p-spray) were irradiated with neutrons and protons to several fluences up to 1.4e16 neq/cm^2. During the pre-qualification process, IV and CV measurements were done before and after each irradiation step. Development of leakage current and full depletion voltage will be shown, as well as an outlook to the Lorentz angle studies.Speaker: Mr Andreas Nuernberg (Institut fuer Experimentelle Kernphysik, KIT)
-
23
CCE Measurements on Irradiated HPK-ATLAS07 n-on-p SensorsA set of strip sensors has been irradiated with pions and protons in a mixed irradiation campaign. The results of CCE measurements after each irradiation step will be presented. In another study three sensors were irradiated with protons in Karlsruhe with a fluence of 1.1E15 n_eq/cm^2. The difference in charge collection measurements will be compared when sensors were annealed at room temperature, 40°C and 60°C.Speaker: Adrian Driewer (Freiburg University)
-
15:40
Coffee
-
24
CCE measurements with SCT128A chip on strip detectors irradiated with pionsRecent charge collection measurements with SCT128A chip on Hamamatsu mini strip detectors will be presented. The detectors were irradiated with pions at PSI in 2010. Measurements were made after several annealing steps at 60C.Speaker: Igor Mandic (University of Ljubljana)
-
25
Low Temperature Electrical Characteristics of Irradiated SensorsThree groups of ATLAS07 miniature sensors have been irradiated on the reactor in Rez near Prague up to fluences 4E14, 2E15 and 1E16 neq/cm2. The basic electrical characteristics IV, CV, an interstrip capacitance, a coupling capacitance and the DC PTP have been measured at temperature -30 deg C and compared to ones of the non-irradiated sensors.Speaker: Dr Jan Bohm (Institute of Physics AS CR)
- 26
- 27
-
28
Atomoc Layer Ddeposition (ALD) Treatment of cleaved SSD to achieve slim edgesWe present the present status of our work on slim edges: using post-fabrication ALD treatment, we can reduce the width of non-active material at the edge considerably without breakdown. ALD is shown to work for both p-type and n-type sensors. We show the first results on charge collection.Speaker: Hartmut Sadrozinski (SCIPP, UC santa Cruz)
- 29
-
19
-
Workshop Dinner
-
-
-
Pixel and 3D sensorsConvener: Richard Bates (Department of Physics and Astronomy)
-
30
Lab measurements and testbeam results of irradiated n<sup>+</sup>-in-n planar pixel sensors for IBL and beyondWe have irradiated n+-in-n sensor assemblies based on the current ATLAS readout chip FE-I3 up to the required IBL end of life fluence 5x1015 neq/cm2 (and further up to 2x1016 neq/cm2 for HLLHC) using thermal neutrons in Ljubljana as well as low energy protons in Karlsruhe. Promising results, particularly hit efficiencies, from the analysis of testbeam data will be shown. Furthermore an update on the overall charge collection gained from lab measurements will be presented. An outlook on first results obtained in the lab with similarly irradiated FE-I4 based SingleChip assemblies and their general behaviour will be given as well.Speaker: Mr André Rummler (TU Dortmund)
-
31
Characterization and Testbeam Analysis of irradiated Silicon n-in-p Pixel Detectors for the ATLAS UpgradeFE-I3 compatible, n-in-p single chip modules, produced in the framework of a joint RD50-ATLAS planar pixel group production have been irradatiad up to 5x1015 neq/cm2 with protons (KIT and CERN PS) and reactor neutrons (JSI). They were characterized in the laboratory as well as under beam-test conditions at the CERN SPS. New results on the charge collection performance as well on the high voltage stability will be presented. Additionally, an update on the results from beam-test studies is given.Speaker: Philipp Weigell (MPI für Physik)
-
32
Micron n-in-p analogue SCA pixel detector fine neutron radiation characterizationThe charge sharing between adjacent segmented electrodes is an important parameter for the spatial resolution of tracking silicon sensors. Hadron irradiation is though known to decrease charge sharing by mean of trapping of the signal charge carriers generated by the ionising event, to eventually reduce the resolution of the sensor to binary. The study of the degradation of charge collection and charge sharing of pixel detectors as a function of hadron irradiation is presented. These pixel sensors were specially conceived for analogue readout with electronics designed for microstrip sensors. This approach allows measuring the detector properties with much higher sensitivity with respect to the electronics currently used for reading out pixilated sensors thanks to the analogue output signal digitised by a 12 bit ADC.Speaker: Mr Dean Charles Forshaw (Department of Physics-Oliver Lodge Laboratory-University of Liv)
-
33
Characterization and test beam studies for FE-I3 planar n-in-p and 3D double-sided pixel sensors for the ATLAS upgradeSolid state detectors provide very high precision tracking in particle physics experiments. However, their tracking performance start to degrade at fluxes of radiation around ~10¹⁴-10¹⁵ hadrons/cm². Research on new radiation-hard pixel sensor technologies is being done at IFAE, in collaboration with CNM. Results of the characterisation and beam test studies of n-in-p planar and 3D double sided devices bump bonded to the current ATLAS pixel front-end chip (FE-I3) will be presented. An overview of this work is given in this talk.Speaker: Mr Roger Caminal Armadans (IFAE - Institut de Física d'Altes Energies-Universitat Autònoma)
-
10:20
Coffee Break
- 34
-
35
Update of 3D Simulations and Processing of New BNL 3D-Trench-Electrode DetectorsUpdate of 3D Simulations and Processing of New BNL 3D-Trench-Electrode Detectors Z. Li1 , D. Bassignana2, G. Pellegrini2, M. Lozano2 and D. Quirion2 1 Brookhaven National Laboratory, Bldg. 535B, Upton, NY 11973-5000, USA 2Centro Nacional de Microelectrónica IMB-CNM-CSIC, Campus Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona (Spain) More full 3D simulations on the new BNL 3D-Trench-Electrode detectors have been performed. In addition to the square geometry, hexangular and near-circular geometry single cells with boundary conditions on both top (oxide, oxide charges) and bottom (oxide, oxide charges, and spray ion implant) surfaces were simulated. Large cells with a diameter up to 300 m need a bias voltage as small as 5 volts to fully deplete for a 400 m thickness high resistivity (non-irradiated) detector. Some small effects of slightly lower electric field (about 25-30% less) in the corners of square, hexangular geometry cells have been found by simulation. These effects are not significant since the fields are high enough for carriers to drift out before significant diffusion effect can take place. The fabrication of the first prototype detectors has already begun at CNM in Spain. The etch process of trenches up to 250 m in depth with various geometries and cell sizes went extremely well. Some photos of etched trenches will be shown.Speaker: Zheng Li (BNL)
- 36
-
12:00
Lunch Break
-
30
-