Werner Riegler
(CERN)
02/12/2015, 09:35
The
Future
Circular
Collider
(FCC)
is
an
integral
conceptual
design
study
for
post - LHC
particle
accelerator
options
in
a
global
context.
It
is
exploring
the
potential
of
hadron
and
lepton
circular
colliders,
performing
an
in -...
Maurice Glaser
(CERN)
02/12/2015, 10:10
Michael Solar
(Czech Technical University (CZ))
02/12/2015, 11:00
Standard (20 min including discussion)
In the laboratory building of the Faculty of Mathematics and Physics, Charles University (FMP CU) in Prague Troja an electrostatic ion accelerator, Van de Graaff HV2500 (product of the HVE Europe) with maximum energy 2.5 MeV protons is currently in operation. Accelerator was commisioned in 80th of 20th century, and now is upgraded and operated by IEAP CTU staff. It is planned to maintain it in...
Ernestas Zasinas
(Vilnius University)
02/12/2015, 11:20
We report about the progress of study of the model of vacancy-interstitial defect cluster presented earlier at 26th Cern RD50 workshop. According to this model the defect cluster is realized as a confined inclusion of disordered vacancy and interstitial defects where the subregion of interstitials is shifed from the subregion of vacancies along the trajectory of incident high energy particle....
Elena Donegani
(University of Hamburg)
02/12/2015, 11:40
Standard (20 min including discussion)
Future HEP experiments will have to face neutron equivalent fluences up to 2$\cdot$10$^{16}$ neq/cm$^{2}$ and an ionizing dose in the order of a few MGy. Thin n+p Si sensors are potential candidates for coping with such radiation environment, but more experimental data are essential in order to: firstly, get a deeper understanding of the properties of hadron induced defects, and secondly...
Juozas Vaitkus
(Vilnius University)
02/12/2015, 12:00
Standard (20 min including discussion)
The measurement of thermally stimulated current was performed in the irradiated silicon pad detectors excited by light and by forward current. The TSC measurement was performed in the reverse bias regime. The differences in the spectrum are explained by a contribution of the non-equilibrium holes on the modulation of the microinhomogeneities related to the clusters and recombination in the...
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warszawa, Poland)
02/12/2015, 12:20
Standard (20 min including discussion)
High-resolution photoinduced transient spectroscopy (HRPITS), infrared absorption (FTIR)
and photoluminescence (PL) measurements have been applied to determining the properties and concentrations of radiation defect centers formed in high-purity FZ silicon due to the irradiation with 23-MeV protons. The selected four proton fluences were equivalent to 1E14, 5E14, 1E15, and 5E15 cm^-2 of...
Eugenijus Gaubas
(Vilnius university)
02/12/2015, 12:40
Standard (20 min including discussion)
Results on research of fluence dependent carrier lifetime variations in pion irradiated and annealed Si will be reported. Profiles of carrier lifetime lateral variation in the as–irradiated p- and n-Si wafer fragments are to be illustrated. The obtained carrier lifetime variations are discussed.
Michael Moll
(CERN)
02/12/2015, 13:00
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
02/12/2015, 14:20
Standard (20 min including discussion)
High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process,
with a substrate resistivity of 10$\Omega\cdot\mathrm{cm}$ were irradiated with 24 GeV/c protons up to a fluence of 7$\times$10$^{15}$ n$_{eq}$/cm$^2$ and thermal neutrons up to a fluence of 2$\times$10$^{16}$ n$_{eq}$/cm$^2$. The detectors were
characterized using edge-TCT. Both, the collected charge and...
Igor Mandic
(Jozef Stefan Institute (SI))
02/12/2015, 14:40
Standard (20 min including discussion)
TCT measurements with focused laser beam were recently made with test structures from different producers of HV-CMOS detectors. The test structures are processed on substrate with different resistivities. In this contribution we will compare TCT measurements with these structures before and after irradiation.
Francisco Rogelio Palomo Pinto
(Universidad de Cantabria (ES))
02/12/2015, 15:00
Standard (20 min including discussion)
Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
02/12/2015, 15:50
Standard (20 min including discussion)
I will present preliminary results from simulated LGAD devices, before and after irradiation.
Electrical properties and response to MIPs and alpha particles will be discussed,
as a function of irradiation fluences, polarization voltage and device temperature.
Gianluigi Casse
(University of Liverpool (GB))
02/12/2015, 16:10
Sven Wonsak
(University of Liverpool (GB))
03/12/2015, 09:00
Miniature silicon strip detectors (~1x1cm) with different thicknesses (50, 100, 150 and 300 μm) from Hamamatsu K.K. and Micron Semiconductor Ltd. were irradiated at Birmingham and Ljubljana with doses up to 2E16 neq/cm^2. IV measurements were performed at different temperatures for the determination of the effective energy Eeff and the current related damage rate α directly after irradiation...
Moritz Wiehe
(Albert-Luwdigs-University Freiburg)
03/12/2015, 09:20
The reverse current of irradiated silicon sensors has a strong influence on the signal-to-noise-ratio of a detector and leads to significant heat dissipation within the detector. Thus knowledge of the expected reverse current is crucial for detector design and operation.
The dependence of the reverse current on temperature and irradiation fluence is parameterized by the effective bandgap Eeff...
Marko Mikuz
(Jozef Stefan Institute (SI))
03/12/2015, 09:40
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 and PS protons up to 3e16 p/cm^2 was investigated by edge-TCT. Methods for absolute determination of electric field were developed and electric field profiles in the silicon bulk obtained. From the v(E) dependence mobility degradation with fluence was extracted. A 1/sqrt(Phi) dependence of mobility on fluence was obseved...
Christian Scharf
(Hamburg University (DE))
03/12/2015, 10:00
For highly irradiated silicon sensors the electric field under reverse bias takes the shape of a double junction with high field strength near the implants and a region of low field strength in between. For this condition it is not trivial to disentangle the electric field, (de-)trapping of charge carriers, and the drift velocity all of which are a function of the irradiation and the position...
Gianluigi Casse
(University of Liverpool (GB))
03/12/2015, 10:20
The development of silicon detectors tolerant to extreme fluences for future high energy and high luminosity hadron colliders (like the upgrade of the present Large Hadron Collider to high luminosity at CERN) is demanded not only for instrumenting the innermost layers (where pixel sensors will be deployed) but also for particle flow calorimetry. The anticipated fluence levels range from 2E16...
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
03/12/2015, 10:40
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
03/12/2015, 11:20
Standard (20 min including discussion)
We will present the last technological developments at CNM on LGAD and iLGAD detectors. The last electrical performances for pad and strip LGADs will also be presented, showing that the fabricated LGAD detectors have a voltage capability higher than 1000 V with leakage currents in the 20 nA/cm2 range, and a linear gain in the typical operating reverse voltage values (200 to 800 V) in the range...
Isidro Mateu Suau
(Centro de Investigaciones Energ. Medioambientales y Tecn. - (ES)
03/12/2015, 11:50
Sofia Otero Ugobono
(Universidade de Santiago de Compostela (ES))
03/12/2015, 12:00
Standard (20 min including discussion)
Results from the study of LGADs from CNM Run 7859 will be presented. TCT+, CV/IV and Sr90 source measurements were performed before irradiation. Some of these sensors have been subjected to proton irradiation at CERN. The fluences to which these were exposed are 1E12, 1E13, 1E14 and 1E15 neq/cm^2. CV/IV curves of the irradiated samples were obtained and will be presented together with an...
Dr
Vladimir Eremin
(Ioffe Institute, St. Petersburg)
03/12/2015, 12:20
Standard (20 min including discussion)
The negative feedback in silicon heavily irradiated detectors is a basic mechanism which governs the detector performance [V. Eremin, et al., NIM A 658 (2011) 145]. The talk presents a comparative study of the mechanism in P+-I-N+ and Low Gain Avalanche Diodes (LGAD) utilizing the classic structure of avalanche photodiodes performed in the fluence range up to 1x10^15 neq/cm2. The analytical...
Nicolo Cartiglia
(Universita e INFN Torino (IT))
03/12/2015, 12:40
Standard (20 min including discussion)
In this contribution I will report on the the timing resolutions of 300-micron thick LGAD sensors from CNM obtained at testbeams and compare the results with prediction from simulations.
I will also illustrate the timing capabilities of future thin LGAD production and report on potential use of LGADs at LHC.
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
03/12/2015, 13:00
Standard (20 min including discussion)
For the use as Ultra-Fast Silicon Detectors, we are planning to use thin (50um) LGAD.
We will report on our measurements and simulations on thin epi sensors and the issues a fast readout will bring
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
03/12/2015, 14:30
Standard (20 min including discussion)
I will do a short summary on the status of the RD50 funding projects related to LGAD detectors.
Giulio Pellegrini
(Universidad de Valencia (ES))
03/12/2015, 14:50
Gregor Kramberger
(Jozef Stefan Institute (SI))
03/12/2015, 15:10
Standard (20 min including discussion)
A full 3D package for charge collection simulations in semiconductor detectors has been developed within the ROOT framework. It solves Poisson and Laplace equations for a given space charge in different materials. The simulation of induced current takes into account all relevant physics processes such as drift, diffusion and impact ionization and trapping.The basics/fundamentals of the...
Gregor Kramberger
(Jozef Stefan Institute (SI))
03/12/2015, 15:30
Standard (20 min including discussion)
Simulation tools designed for charge collection studies were developed by different groups within rd50. These tools solve Poisson equation for a given space charge (rather than calculating it from microscopic defects). Unlike commercial packages they allow for fast simulation of drift and diffusion of generated charges allowing Monte Carlo approach on studies of detector performance. They are...
Joern Schwandt
(Hamburg University (DE))
03/12/2015, 16:20
Standard (20 min including discussion)
For the high luminosity phase of the Large Hadron Collider (HL-LHC) at the expected position of the innermost pixel detector layer of the CMS experiment the estimated equivalent fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ neq/cm$^2$, and the IEL (Ionizing Energy Loss) dose in the SiO$_2$ is 5 MGy. The optimization of the pixel sensors and the understanding of their performance as a...
Dr
Elena Verbitskaya
(Ioffe Institute, St. Petersburg)
03/12/2015, 16:40
Standard (20 min including discussion)
The LGAD characteristics are calculated basing on the model of carrier impact ionization in the p+ built-in layer. It is shown that characteristics of the diodes are controlled by negative feedback via trapping of holes arisen due to impact ionization, which reduces the electric field and the signal gain. The dependences of collected charge vs. bias voltage and fluence are obtained and their...
Ranjeet Dalal
(University of Delhi)
03/12/2015, 17:00
Standard (20 min including discussion)
Recently proposed Low Gain Avalanche Detector (LGAD) designs has been subject of increasing interest within Si sensor community. The LGAD devices fabricated by CNM Barcelona have shown promising characteristics before irradiation. But, after hadron irradiation, a significant degradation of gain has been observed in these devices. These results have not been explained by earlier simulations and...
Geetika Jain
(University of Delhi (IN))
03/12/2015, 17:20
Standard (20 min including discussion)
The pixel sensors of the CMS silicon tracker are required to be upgraded to sustain the harsh radiation environment that will be generated during the High Luminosity Large Hadron Collider (HL-LHC) era. To overcome the problem of radiation damage in Si sensors, an R&D effort is being carried out by the Si sensor Device Simulation Group on different designs of pixel sensors through TCAD...
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
03/12/2015, 17:40
Standard (20 min including discussion)
The significant advantages of detectors manufactured on p-type silicon material over n-type detectors in the HEP particle tracking applications
have been well documented in the R&D community. In AC-coupled p-type position-sensitive strip detectors, however, the fixed oxide
charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. Thus, the...
Gregor Kramberger
(Jozef Stefan Institute (SI)),
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
03/12/2015, 18:00
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
04/12/2015, 09:00
Standard (20 min including discussion)
I will present the last fabrication run ongoing at CNM-IMB on 3D detectors activities for the LHC upgrade and the status of the RD50 project related to 3D.
Joern Lange
(IFAE Barcelona)
04/12/2015, 09:20
Standard (20 min including discussion)
A new generation of radiation-hard 3D detectors optimised for the HL-LHC with small pitches of 25 and 50 um (implying inter-electrode spacings of only about 35 µm) is under development. Until these new productions are available, radiation hardness studies of existing pixel devices from the IBL/AFP generation with about 70 µm inter-electrode spacing are on-going. This presentation will give an...
Ivan Lopez Paz
(Universitat Autònoma de Barcelona (ES))
04/12/2015, 09:40
Standard (20 min including discussion)
3D FEI4 pixel detectors from the IBL production were non-uniformly irradiated at CERN-PS with 23 GeV protons up to a maximum fluence of 9e15 neq/cm2. The devices have been studied in beam tests at CERN SPS and good efficiencies of >97% have been achieved at the highest fluence already at 170 V. Especially interesting is the option to study a vast range of fluences on a single pixel device due...
Mr
Michal Kwestarz
(Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warszawa, Poland)
04/12/2015, 10:00
Standard (20 min including discussion)
We present the properties of the first high-resistivity, nitrogen enriched FZ Si wafers produced within the framework of the NitroSil project. The n-type wafers of 100 mm in diameter were prepared from the high-purity FZ Si crystals grown in <100> direction. The nitrogen doping was performed during the crystals growth and the doping with phosphorus was made by the neutron transmutation process...
Tobias Wittig
(CIS Institut fuer Mikrosensorik GmbH (DE))
04/12/2015, 10:20
Standard (20 min including discussion)
The CiS research institute is engaged in developments of radiation detector technologies on several different fields. Current projects are dealing e.g. with large area thinned sensors, active edge sensors, sensor-chip packaging technologies and defect engineering.
For large area sensors, the need for smaller thicknesses can be approached by etching cavities to the sensors back side while...
Natascha Savic
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
04/12/2015, 11:10
Standard (20 min including discussion)
New productions of thin n-in-p pixel sensors designed at MPP will be presented.
Sensors in the thickness range between 50 and 150 um have been produced at ADVACAM
on SOI wafers with slim or active edges. Evaluation assemblies have been measured by means of radioactive source scans and beam tests.
The performance after irradiation in terms of hit efficiency of different pixel cell designs...
Lenny Spiegel
(Fermi National Accelerator Lab. (US))
04/12/2015, 11:30
Standard (20 min including discussion)
The US CMS Outer Tracker group received a first set of wafers from Tezzaron/Novati, which had been fabricated as part of an innovation grant from the US Department of Energy. A preliminary characterization has been carried out by three US institutes and aside from an anomaly with the guard ring structure the results are promising. The wafers contain a number of test structures, some of which...
Stephan Wiederkehr
(Paul Scherrer Institut (CH))
04/12/2015, 11:50
The PSI chip design team has submitted the ROC4SENS, an analogue pixel chip in $0.25\,\mu$m technology which is dedicated for sensor studies. It has a size of $7.8\times 9.8\,$mm$^2$ covered by $155\times 160$ pixels with a pitch of $50\times 50\,\mu$m$^2$.
The pixel cell does not contain a discriminator and therefore does not apply a threshold on the signal. However this means the data...
Andreas Gisen
(Technische Universitaet Dortmund (DE))
04/12/2015, 12:10
Standard (20 min including discussion)
The innermost tracking detector of the ATLAS experiment consists of planar n-in-n pixel sensors. Also the newly installed insertable b-layer (IBL) consists of pixel sensors but with a revised design layout and an improved front-end electronics. The envisaged radiation dose in the run II data taking period of the innermost sensors will be a few $10^{15} \text{n}_{\text{eq}}\text{cm}^{-2}$....
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
04/12/2015, 12:30
Standard (20 min including discussion)
In the context of the latest CNM LGAD production run, SiMS measurements and simulations are presented for the and nntypr implants. An additional study on irradiated p-implanted doping profiles is performed with fuences of 10^15neq/cm^2
Gianluigi Casse
(University of Liverpool (GB)),
Giulio Pellegrini
(Universidad de Valencia (ES))
04/12/2015, 12:50
