9:00 AM
|
Detector Characterization and Simulations
-
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
(until 3:30 PM)
()
|
9:00 AM
|
FORMATION AND ANNEALING OF INTERSTITIAL DEFECTS IN P-TYPE SILICON AND SILICON-GERMANIUM ALLOYS UNDER ELECTRON AND ALPHA-IRRADIATION
- Dr
Leonid Makarenko
(Belarusian state University)
()
|
9:20 AM
|
Irradiation study on diodes of different silicon materials for the CMS tracker upgrade
-
Joachim Erfle
(Hamburg University (DE))
()
|
9:40 AM
|
Impact of proton irradiations with different particle-energies on the electrical properties of Si-diodes
-
Coralie Neubuser
(Hamburg University (DE))
()
|
10:00 AM
|
Operational conditions for enhancement of collected charge via avalanche multiplication in n-on-p strip detectors
- Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
()
|
10:20 AM
|
--- Coffee Break ---
|
10:50 AM
|
Analysis of Edge and Surface TCTs for Irradiated 3D Silicon Strip Detectors
-
Graeme Douglas Stewart
(University of Glasgow)
()
|
11:10 AM
|
Characterization of Micron n-on-p ministrip sensors irradiated with 24 GeV/c protons.
-
Nicola Pacifico
(Universite Montpellier II (FR))
()
|
11:30 AM
|
Charge collection studies on heavily irradiated diodes from the RD50 multiplication run
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
()
|
11:50 AM
|
Thin Irradiated Strip and Pixel Detectors
-
Philipp Weigell
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
()
|
12:10 PM
|
Low cost commercial scanning TCT setup
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
()
|
12:30 PM
|
TCAD Simulation of irradiated Silicon radiation detector using commercial simulation products
-
Mathieu Benoit
(CERN LCD)
()
|
1:00 PM
|
--- Lunch ---
|
2:00 PM
|
Electric Field Modeling by simulations with ISE-TCAD
-
Mercedes Minano Moya
(Universidad de Valencia (ES))
()
|
2:20 PM
|
Simulation of the Double Peak Effect in irradiated Sensors
-
Robert Eber
(KIT - Karlsruhe Institute of Technology (DE))
()
|
2:40 PM
|
Isolation Characteristics of Silicon Sensors Using Simulation Approach
- Dr
Kirti Ranjan
(Delhi University)
()
|
3:00 PM
|
Discussion - Simulation Working Group
-
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
()
|