6th RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders

2 Jun 2005, 09:00 → 4 Jun 2005, 14:00 Europe/Zurich

0--E204 (Physicum campus, University of Helsinki, Finland)

jaakko.haerkoenen@cern.ch

http://eija.home.cern.ch/eija/helsinkiWS.htm

Thursday 2 June

09:00 → 10:00 Plenary session -Silicon technology for detectors

09:00 Welcome

Speaker: Mara Bruzzi, Jaakko Haerkoenen and Michael Moll

09:15 Manufacture of High Resistivity, Low Oxygen Czochralski Silicon

Speaker: Olli Anttila (Okmetic Oyj)

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• CERN_RD-50_06_2005_Okmetic_OA.pdf
• CERN_RD-50_06_2005_Okmetic_OA.pdf
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09:40 Quantitative copper and iron measurement in silicon using contactless recombination lifetime measurements

Speaker: Hele Savin (Helsinki University of Technology)

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10:00 → 11:20 Defect and Material Characterization

10:00 Admittance spectroscopy study of point defects and nano-clusters in irradiated high-purity silicon

Speaker: Klaus Johansen (University of Oslo)

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10:20 X defect after Co-60 gamma irradiation

Speaker: Frank Hönniger (University of Hamburg)

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10:40 Photoinduced transient spectroscopy of epitaxial silicon irradiated with high proton fluences

Speaker: Pawel Kaminski (Institute of Electronic Materials Technology)

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11:00 Irradiation damage in sublimation grown 6H-SiC

Speaker: Mads Mikelsen (University of Oslo)

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11:00 → 12:00 Defect Engineering

11:00 Shallow donors in MCz-Si n- and p-type Detectors at different process temperature, irradiation and thermal treatments

Speaker: David Menichelli (University of Florence, INFN Florence)

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11:20 Numerical simulation of radiation damage effects in p-type silicon detectors

Speaker: Marco Petasecca (University of Perugia - DIEI)

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11:40 Detector Recovery/Improvement Via Elevated-temperature-annealing (DRIVE) - A New Approach for Si Detector Applications in High Radiation Environment in SLHC

Speaker: Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)

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13:30 → 15:10 Pad Detector Characterization

13:50 Radiation tolerant epitaxial silicon detectors of different thickness

Speaker: Eckhart Fretwurst (Univeristy of Hamburg)

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14:10 Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope

Speaker: Kari Leinonen (Lappeenranta University of Technology)

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14:30 Irradiation results of MCZ, thinned and epitaxial detectors

Speaker: Andrea Candelori (INFN Padova)

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14:50 Characterization of n and p-type diodes processed on Fz and MCz silicon after irradiation with protons of 24GeV/c and 26 MeV/c and with reactor neutrons

Speaker: Norman Manna (INFN Bari)

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16:00 → 17:40 New Materials

16:00 Minimum ionizing particle detector based on p+n junction SiC diode

Speaker: Francesco Moscatelli (DIEI and INFN Perugia and CNR-IMM Bologna)

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16:20 Properties of 12 micron thick epitaxial GaN irradiated up to 1e16 cm2 by 24 GeV protons

Speaker: Juozas Vaitkus (Vilnius University)

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16:40 I-V & CCE Characterisation of Proton Irradiated 12 Micron Epitaxial GaN Detectors

Speaker: James Grant (University of Glasgow)

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17:00 COMPARISON OF SHALLOW DONOR FORMARION AND RADIATION DEFECT ELIMINATION IN HYDROGENATED PARTICLE DETECTORS MADE OF STANDARD AND DIFFUSION OXYGENATED SILICON

Speaker: Leonid Makarenko ((Belarusian State University)

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17:20 EVALUATION OF OXYGEN AND CARBON CONTENT IN STANDARD FLOAT ZONE SILICON DETECTORS

Speaker: Leonid Makarenko ((Belarusian State University))

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Friday 3 June

09:00 → 12:35 Full Detector Systems

09:00 Neutron-induced activity studies of the ATLAS SCT strip detector module, glues and paint

Speaker: Vladimir Linhart (Czech Technical University in Prague)

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09:20 Updated double junction simulation of CMS pixel test beam data

Speaker: Morris Swartz (Johns Hopkins University)

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09:40 Test Beam Results of Proton Irradiated Czochralski Silicon Strip Detector

Speaker: Panja Luukka (Helsinki Institute of Physics)

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10:00 Radiation Testing of bipolar SiGe transistors

Speaker: Hartmut F.-W. Sadrozinski (SCIPP, UC Santa Cruz)

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10:20 Update of annealing measurements on heavily irradiated p-type sensors

Speaker: Gianluigi Casse (University of Liverpool)

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10:40 Laser Tests of Silicon Strip Sensors

Speaker: Peter Kodys (Charles University, Prague)

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10:55 P-spray implant optimization for P-type microstrip detectors.

Speaker: Celeste Fleta (CNM Barcelona)

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11:15 2D simulation of n-on-p strip detectors with different p-stop and p-spray structures

Speaker: Tanja Palviainen (Lappeenranta University of Technology)

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11:35 Irradiation of Fz and MCz mini-sensors of n and p-type with 24 GeV/c and 26 MeV/c protons up to fluences of 3.0E+15 1MeV n/cm2. Irradiation of Fz and MCz mini-sensors of n and p-type with 24 GeV/c an

Speaker: Alberto Messineo (Pisa University)

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11:55 Prospects and Benefits of Freiburg joining RD50

Speaker: Ulrich Parzefall

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12:15 Radiation Effects Facility (RADEF) at Jyväskylä

Speaker: Ari Virtanen (University of Jyväskylä)

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14:00 → 16:00 Collaboration Board Meeting

19:00 → 22:00 Social Dinner

Restaurant Walhalla, Suomenlinna.
http://www.restaurantwalhalla.com/eng/index.htm

Saturday 4 June

10:30 → 11:10 New Structures

10:30 New Single-sided 2d and (2+3)d Stripixel Detectors: Concept, Simualtion, and Design

Speaker: Zheng Li

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10:50 Annealing studies on Sintef sensors

Speaker: daniela bortoletto (purdue)

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10:50 Measurement of MCz sensors

Speaker: daniela bortoletto (purdue)

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