8th RD50 Workshop

25 Jun 2006, 15:00 → 28 Jun 2006, 21:40 Europe/Zurich

Prague

Michael Moll (CERN)

8th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders ( Workshop Homepage )

Sunday, 25 June

15:00 → 19:00 Excursion

15:00 Visit to the old city of Prague

Meeting point: Workshop site (see Workshop homepage)

18:00 Visit to a brewery (U Vejvodů)

Web page of brewery Web page of brewery

Monday, 26 June

09:00 → 09:20 Welcome

09:00 Welcome at the CTU Prague

Speaker: Prof. František Hrdlička (Dean of Faculty of Mechanical Engineering, CTU Prague)

09:10 Welcome by RD50 Co-Spokespersons

Speakers: Mara Bruzzi (INFN and University of Florence), Michael Moll (CERN)

09:20 → 11:20 Defect and Material Characterization

09:20 Defect kinetics in Epi/Cz silicon after Co60-gamma irradiation

I.Pintilie (a,b), E. Fretwurst (b), F. Hoeniger (b), G. Lindstroem (b) and B. G. Svensson (c) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Institute for Experimental Physics-Hamburg University, (c) Oslo University, Dept. of Physics,

Speaker: Ioana Pintilie (NIMP Bucharest)

Abstract Abstract

Slides PragueRD50-Ioana_Pintilie-corrected.pdf PragueRD50-Ioana_Pintilie-corrected.ppt

09:40 Characterization of irradiated silicon structures by microwave absorption techniques

E.Gaubas, J.Vaitkus Vilnius university

Speaker: Eugenijus Gaubas (Vilnius)

Abstract Abstract

Slides 8-rd50-egaubas.pdf 8-rd50-egaubas.ppt

10:00 Coffee break

10:30 DLTS measurements of Epitaxial and MCZ silicon detectors after 26 MeV proton irradiation

F. Hönniger(a), A. Furgeri(b), E. Fretwurst(a), G. Lindström(a), I. Pintilie(c), Institutes : (a) Institute for Experimental Physics, University of Hamburg (b) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (c) National Institute for Materials Physics, Bucharest

Speaker: Frank Hoeniger (Hamburg University)

Slides DLTS_measurements_of_Epitaxial_and_MCZ_silicon_detectors.pdf DLTS_measurements_of_Epitaxial_and_MCZ_silicon_detectors.ppt

10:50 Discussion on Defect and Material Characterization

Slides Defect_and_Material_Characterisation.doc Defect_and_Material_Characterisation.pdf

11:20 → 17:30 Full Detector Systems

11:20 Evaluation of the Radiation Tolerance of IBM SiGe Heterojunction Bipolar Transistors Under Gamma Source Irradiation

J. Metcalfe, D.E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney, P. Mekhedjian, M. Mendoza, M. Rogers, H.F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder; J.D. Cressler, G. Prakash, A. Sutton; R. Hackenburg, J. Kierstead, S. Rescia Santa Cruz Institute for Particle Physics, University of California Santa Cruz; School of Electrical and Computer Engineering, Georgia Institute of Technology; Instrumentation Division, Brookhaven National Laboratory

Speaker: Jessica Metcalfe (University of California Santa Cruz)

Slides SiGe_RD50_Prague_06.pdf SiGe_RD50_Prague_06.ppt

11:40 Radiation Tests on SiGe Technologies for the Front-End Detector Readout in the S-LHC

M. Ullán(1), S. Díez(1), F. Campabadal(1), M. Lozano(1), G. Pellegrini(1), D. Knoll(2), B. Heinemann(2) (1) CNM-IMB (CSIC), Barcelona (2) IHP Microelectronics, Frankfurt(Oder), Germany

Speaker: Miguel Ullán (CNM-IMB (CSIC), Barcelona)

Slides CNM_SiGe-IHP.pdf CNM_SiGe-IHP.ppt

12:00 lunch break

13:15 Characterization of irradiated MOS-C with X-Ray by using CV-Measurement and gated diode technique

Q. Wei, L. Andricek, H-G. Moser, R.H. Richter Max-Planck-Institute for Physics Semiconductor Laboratory

Speaker: Qingyu Wei (Max-Planck-Institut Munich)

Slides RD50_in_Prag.pdf RD50_in_Prag.ppt

13:35 Gamma Irradiation of SMART MOS capacitors and Interstrip capacitance test structures

Hartmut F.-W. Sadrozinski, C. Betancourt, R. Heffern, I. Henderson, J. Pixley, A. Polyakov,M. Wilder and G.-F. Dalla Betta and the SMART Collaboration SCIPP, UC Santa Cruz DIT, Università di Trento,

Speaker: Hartmut Sadrozinski (SCIPP)

Slides SMART_MOS_RD50_June_06.pdf SMART_MOS_RD50_June_06.ppt

13:55 Sensor simulation and position calibration for the CMS Pixel Detector

V.Chiochia, M.Swartz, E.Alagoz University of Zurich, Paul Scherrer Institut, Johns Hopkins University

Speaker: Vincenzo Chiochia (University of Zurich)

Slides RD50_Chiochia.pdf RD50_Chiochia.ppt

14:15 Simulations Of Laser In Silicon Detectors.

Zbynek Drasal, Zdenek Dolezal, Peter Kodys, Pavel Reznicek IPNP, Charles University, Prague

Speaker: Peter Kodys (CTU)

Slides DrasalRD50Prague.pdf

14:30 Tests Of Laser In Silicon Detectors.

Peter Kodys, Zdenek Dolezal, Zbynek Drasal, Pavel Reznicek IPNP, Charles University

Speaker: Peter Kodys (CTU Prague)

Slides Kodys_RD50Prague2006June26a.pdf Kodys_RD50Prague2006June26a.ppt

14:45 coffee break

15:15 Status and first results of an IR-lasertester setup in Freiburg

T. Ehrich 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, J. Härkönen 2, K. Jakobs 1, S. Kühn 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento

Speaker: Thies Ehrich (University of Freiburg)

Slides rd50_prag_thies.pdf rd50_prag_thies.ppt

15:35 Prototype module characterization with a beta source setup in Freiburg

S. Kühn 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, T. Ehrich 1, J. Härkönen 2, K. Jakobs 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento

Speaker: Susanne Kuehn (University of Freiburg)

Slides prag_talk_6.pdf prag_talk_6.ppt

15:55 Development of Moderated p-spray Isolation Techniques for P-type Detectors at CNM.

M. Lozano(1), C. Fleta(1)(*), G. Pellegrini(1), F. Campabadal(1), J. M. Rafí(1), M. Ullán(1), S. Martí(2), M. Miñano(2) (1) CNM-IMB (CSIC), Barcelona, Spain (2) IFIC (CSIC), Valencia, Spain (*) Currently at University of Glasgow, UK

Speaker: Manuel Lozano (CNM-IMB (CSIC), Barcelona)

Slides RD50_CNM_p-type.pdf RD50_CNM_p-type.ppt

16:15 The Helsinki Beam Telescope

Speaker: Panja Luukka (HIP)

Slides SiBT_Panja_Luukka.pdf SiBT_Panja_Luukka.ppt

16:30 Freiburg fan ins

Speaker: Simon Eckert (Uni Freiburg)

Slides RebondableFanIns.pdf RebondableFanIns.ppt

16:45 Status of the RD50 6 inch wafer Production

Hartmut Sadrozinski SCIPP, UC Santa Cruz

Speaker: Hartmut Sadrozinski (SCIPP)

Slides 6in_RD50_Prague_June.pdf 6in_RD50_Prague_June.ppt

17:05 Discussion session on Full Detector Systems

Slides FDS.pdf FDS.ppt

18:30 → 23:30 Workshop dinner

Tuesday, 27 June

09:00 → 10:50 Defect Engineering

09:00 Status report on new epi-devices

E. Fretwurst(a), A. Barcz(b), A. Furgeri(c), G. Lindström(a), F. Hönniger(a), G. Kramberger(d), E. Nossarzewska(e), I. Pintilie(f), R. Röder(g) (a) Institute for Experimental Physics, University of Hamburg (b) ITE Institute of Electron Technology, Warsaw (c) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (d) Jozef Stefan Institute, University of Ljubljana (e) ITME Institute of Electronic Materials Technology, Warsaw (f) National Institute for Materials Physics, Bucharest (g) CiS Institut für Mikrosensorik gGmbH, Erfurt

Speaker: Eckhart Fretwurst (Inst. for Exp. Phys., University of Hamburg)

Slides Prague-NEW-EPI-Fretwurst-June-06.pdf Prague-NEW-EPI-Fretwurst-June-06.ppt

09:20 Measurement of Trapping Time Constants in Neutron Irradiated Pad Detectors

Jens Weber, Reiner Klingnberg Experimentelle Physik IV Universität Dortmund

Speaker: Jens Weber (Universität Dortmund)

Slides rd50_8workshop_weber.pdf

09:40 Annealing studies of effective trapping times in silicon detectors

M. Batič, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik Jozef Stefan Institute

Speaker: Matej Batic (Jozef Stefan Institute)

Slides RD50_Prague_2006_Annealing_talk.pdf

10:00 Recent CCE measurements with neutron irradiated epi-Si pad detectors

V. Cindro, E. Fretwurst, V. Khomenkov, G. Kramberger, G. Lindstroem, I. Mandić, M. Mikuž, M. Zavrtanik, Jozef Stefan Institute, University of Hamburg, INFN Padova

Speaker: Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)

Slides CCE_Epi-Si.pdf CCE_Epi-Si.ppt

10:20 Coffee break

10:50 → 15:00 Pad Detector Characterization

10:50 Study of radiation damage induced by protons and neutrons on heavily irradiated Magnetic Czochralski and Epitaxial silicon detectors

Manna Norman and SMART collaboration INFN Bari, Pisa, Firenze, Trento, Padova

Speaker: Norman Manna (INFN Bari)

Slides norman_RD_06_06_praga.pdf norman_RD_06_06_praga.ppt

11:10 Trapping of electrons and holes in p-type silicon irradiated with neutrons

V.Cindro1, G. Kramberger1, M. Lozano2, I. Mandić1, M. Mikuž1,3, G. Pellegrini2, J. Pulko1, M. Ullan2, M. Zavrtanik2 1-Jožef Stefan Institute, Ljubljana, Slovenia 2-Instituto de Microelectrónica de Barcelona, CNM-IMB (CSIC), Barcelona Spain 3-Faculty for Mathematics and Physics, University of Ljubljana, Slovenia

Speaker: Vladimir Cindro (Jožef Stefan Institute, Ljubljana, Slovenia)

Slides Trapping_p_Cindro.pdf Trapping_p_Cindro.ppt

11:30 Long term annealing of neutron irradiated detectors evaluated at LHC operational temperatures

E. Verbitskaya1, V. Eremin1, I. Ilyashenko1, Z. Li2, J. Härkönen3, V. Cindro4 1 Ioffe Physico-Technical Institute RAS 2 Brookhaven National Laboratory 3 Helsinki Institute of Physics 4 Jožef Stefan Institute, Ljubljana

Speaker: Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)

Slides Verbitskaya_8_RD50_wksh.pdf Verbitskaya_8_RD50_wksh.ppt

12:10 CV and CCE characterization of p-type MCZ Material

Herbert Hoedlmoser, Michael Moll (CERN)

Speaker: Herbert Hoedlmoser (CERN)

Slides hoedlmoser.pdf hoedlmoser.ppt

12:30 Lunch break

14:00 Discussion session on Defect Engineering and Pad Detector Characterization

15:00 → 17:40 New Structures

15:00 Development of New 3d Si detectors at BNL and CNM

Z. Li1, W. Chen1, Y.H. Guo1, D. Lissauer1, D. Lynn1, V. Radeka1, M. Lozano2, G. Pellegrini2 1Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Centro Nacional de Microelectrónica, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra (Barcelona), Spain

Speaker: Zheng Li (BNL)

Slides New2+3d-5b.pdf New2+3d-5b.ppt

15:20 coffee break

15:50 Progress on 3D mask

R. Bates, G. Pellegrini Glasgow, CNM

Speaker: Richard Bates (Glasgow University)

Slides New_Mask_for_3D_detectors.pdf New_Mask_for_3D_detectors.ppt

16:05 3D detectors simulation and measurements

Celeste Fleta (Glasgow)

Speaker: Celeste Fleta

Slides Prague-Fleta-3d.pdf Prague-Fleta-3d.ppt

16:20 Position sensitive TCT measurements with 3D-sct detectors

V. Cindro, G. Kramberger, J. Langus, I. Mandić, M. Mikuž, M. Zavrtanik, M. Boscardin, G.F. Dalla Betta, C. Piemonte, A. Pozza, S. Ronchin, N. Zorzi Jozef Stefan Institute, IRST Trento

Speaker: Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)

Slides PSTCT_3D.pdf PSTCT_3D.ppt

16:40 Characterisation of Irradiated 3D Detectors

Martin Hoeferkamp, Sally Seidel, Igor Gorelov University of New Mexico

Speaker: Martin Hoeferkamp (University of New Mexico)

Slides martin_3dsensor_cap.pdf martin_3dsensor_cap.ppt

17:00 Charge Collection in single-column 3D detectors

Firenze, UC Santa Cruz and ITC-irst

Speakers: Hartmut Sadrozinski (SCIPP), Hartmut Sadrozinski (SCIPP)

Slides Depletion_3D_RD50_Prague_june2.pdf Depletion_3D_RD50_Prague_june2.ppt

17:15 Discussion session on New Structures

17:40 → 19:00 Collaboration Board Meeting

17:40 NIKHEF activities and infrastructure

Speaker: Fred Hartjes (NIKHEF)

Slides RD50_membership.pdf RD50_membership.ppt

17:55 CB discussions

20:00 → 22:00 ATLAS Tracker Upgrade session

Wednesday, 28 June

09:00 → 12:40 New Materials

09:00 I-V & CCE results of neutron irradiated GaN Schottky Detectors

J. Grant (1), R. Bates (1), W. Cunningham (1), A. Blue (1), J. Vaitkus (2), E. Gaubas (2), V. OShea (1) (1) Dept. of Physics & Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (2) Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9 -lll, 2040, Vilnius, Lithuania

Speaker: James Grant (University of Glasgow)

Slides JGrant.pdf JGrant.ppt

09:20 Properties of irradiated semi-insulating GaN

J.Vaitkus (1), J.P.Grant (2), E.Gaubas (1), V.Kazukauskas(1), V.Kalendra(1), G.Pobedinskas(1), S.Sakai (3), J.Storasta(1) Institute of Materials Science and Applied Research, (1) Vilnius University, Sauletekio 9-III, Vilnius, Lithuania; (2) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UV; (3) Dept. Engineering, Tokushima University, Tokushima, Japan.

Speaker: Juozas Vaitkus (Vilnius University)

Slides Vaitkus-Prague-Semi-insulating_GaN.pdf Vaitkus-Prague-Semi-insulating_GaN.ppt

09:40 KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS

L.F. Makarenko*, M. Moll**, F.P. Korshunov***, S.B. Lastovski***, L.I. Murin*** * Belarusian State University, Minsk, Belarus **CERN, Geneva, Switzerland ***Institute of Solid State and Semiconductor Physics, Minsk, Belarus

Speaker: Leonid Makarenko (Belarusian State University)

Abstract

• Abstract
• talk_makarenko_KINETICS.pdf
• talk_makarenko_KINETICS.ppt

10:00 CHARACTERIZATION OF DEFECTS WITH SMALL CAPTURE CROSS-SECTION IN DETECTOR-GRADE SILICON BY DLTS and LAPLACE-DLTS

L.F. Makarenko*, J. Evans-Freeman**, V.P. Markevich***, S.B. Lastovski**** * Belarusian State University, Minsk, Belarus **Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK ***School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK ****Institute of Solid State and Semiconductor Physics, Minsk, Belarus

Speaker: Leonid Makarenko (Belarusian State University)

Abstract

• Abstract
• talk_makarenko_LAPLACE.pdf
• talk_makarenko_LAPLACE.ppt

10:20 coffee break

10:50 Annealing of the vacancy-oxygen and divacancy-oxygen complexes in silicon

M. Mikelsen (1), E. V. Monakhov (1), B. S. Avset (2), B. G. Svensson(1) (1) Department of Physics, Physical Electronics, University of Oslo (2) SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo, Norway

Speaker: Eduard Monakhov

Slides monakhov_RD50_june2006.pdf monakhov_RD50_june2006.ppt

11:10 The influence of growth conditions on irradiation induced defects in 4H-SiC

I.Pintilie (a,b), B. G. Svensson (b), K. Irmscher (c), U. Grössner (b) and B. Thomas (d) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Oslo University, Dept. of Physics, P.B. 1048 Blindern, N-0316, Oslo, Norway (c) Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., D 12489 Berlin, Germany (d) SiCED Electronics Development GmbH&Co. KG, D 91052 Erlangen, Germany

Speaker: Ioana Pintilie (NIMP Bucharest)

Abstract Abstract

11:30 Deep levels induced by very high dose neutron irradiation in 4H-SiC

A.Castaldini, A.Cavallini, F.Fabbri, F.Nava, P.Errani, V.Cindro Department of Physics University of Bologna Department of Physics University of Modena

Speaker: Filippo Fabbri (Department of Physics, University of Bologna)

Abstract Abstract

Slides Fabbri-Rd50.pdf Fabbri-Rd50.ppt

11:50 Annealing effects on p+n junction 4H-SiC diodes after very high neutron irradiation

Francesco Moscatelli 1,3*, Andrea Scorzoni 2,1,3, Antonella Poggi 1, Mara Bruzzi 4, Silvio Sciortino 4, Stefano Lagomarsino 4, I. Mandic 5 and Roberta Nipoti 1 1 CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy 2 DIEI , Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy 3 INFN of Perugia, via Pascoli 1, 06123 Perugia, Italy 4 Dipartimento di Fisica, Polo Scientifico di Sesto Fiorentino,Via Sansone 1 Firenze Italy 5 Jozef Stefan Institute, Ljubljana, Slovenia.

Speaker: Francesco Moscatelli (IMM-CNR)

Slides Moscatelli-8th-Rd50-1.pdf Moscatelli-8th-Rd50-1.ppt

12:10 Discussion session on New Materials

Slides material_comparison.pdf material_comparison.ppt