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8th RD50 Workshop

→ Europe/Zurich
Prague

Prague
Michael Moll (CERN)
Description
8th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders ( Workshop Homepage )
  • Sunday 25 June
    • 15:00 → 19:00
      Excursion
      • 15:00
        Visit to the old city of Prague 3h
        Meeting point: Workshop site (see Workshop homepage)
      • 18:00
        Visit to a brewery (U Vejvodů) 1h
        Web page of brewery
  • Monday 26 June
    • 09:00 → 09:20
      Welcome
      • 09:00
        Welcome at the CTU Prague 10m
        Speaker: Prof. František Hrdlička (Dean of Faculty of Mechanical Engineering, CTU Prague)
      • 09:10
        Welcome by RD50 Co-Spokespersons 10m
        Speakers: Mara Bruzzi (INFN and University of Florence), Michael Moll (CERN)
    • 09:20 → 11:20
      Defect and Material Characterization
      • 09:20
        Defect kinetics in Epi/Cz silicon after Co60-gamma irradiation 20m
        I.Pintilie (a,b), E. Fretwurst (b), F. Hoeniger (b), G. Lindstroem (b) and B. G. Svensson (c) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Institute for Experimental Physics-Hamburg University, (c) Oslo University, Dept. of Physics,
        Speaker: Ioana Pintilie (NIMP Bucharest)
        Abstract
        Slides
      • 09:40
        Characterization of irradiated silicon structures by microwave absorption techniques 20m
        E.Gaubas, J.Vaitkus Vilnius university
        Speaker: Eugenijus Gaubas (Vilnius)
        Abstract
        Slides
      • 10:00
        Coffee break 30m
      • 10:30
        DLTS measurements of Epitaxial and MCZ silicon detectors after 26 MeV proton irradiation 20m
        F. Hönniger(a), A. Furgeri(b), E. Fretwurst(a), G. Lindström(a), I. Pintilie(c), Institutes : (a) Institute for Experimental Physics, University of Hamburg (b) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (c) National Institute for Materials Physics, Bucharest
        Speaker: Frank Hoeniger (Hamburg University)
        Slides
      • 10:50
        Discussion on Defect and Material Characterization 30m
        Slides
    • 11:20 → 17:30
      Full Detector Systems
      • 11:20
        Evaluation of the Radiation Tolerance of IBM SiGe Heterojunction Bipolar Transistors Under Gamma Source Irradiation 20m
        J. Metcalfe, D.E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney, P. Mekhedjian, M. Mendoza, M. Rogers, H.F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder; J.D. Cressler, G. Prakash, A. Sutton; R. Hackenburg, J. Kierstead, S. Rescia Santa Cruz Institute for Particle Physics, University of California Santa Cruz; School of Electrical and Computer Engineering, Georgia Institute of Technology; Instrumentation Division, Brookhaven National Laboratory
        Speaker: Jessica Metcalfe (University of California Santa Cruz)
        Slides
      • 11:40
        Radiation Tests on SiGe Technologies for the Front-End Detector Readout in the S-LHC 20m
        M. Ullán(1), S. Díez(1), F. Campabadal(1), M. Lozano(1), G. Pellegrini(1), D. Knoll(2), B. Heinemann(2) (1) CNM-IMB (CSIC), Barcelona (2) IHP Microelectronics, Frankfurt(Oder), Germany
        Speaker: Miguel Ullán (CNM-IMB (CSIC), Barcelona)
        Slides
      • 12:00
        lunch break 1h 15m
      • 13:15
        Characterization of irradiated MOS-C with X-Ray by using CV-Measurement and gated diode technique 20m
        Q. Wei, L. Andricek, H-G. Moser, R.H. Richter Max-Planck-Institute for Physics Semiconductor Laboratory
        Speaker: Qingyu Wei (Max-Planck-Institut Munich)
        Slides
      • 13:35
        Gamma Irradiation of SMART MOS capacitors and Interstrip capacitance test structures 20m
        Hartmut F.-W. Sadrozinski, C. Betancourt, R. Heffern, I. Henderson, J. Pixley, A. Polyakov,M. Wilder and G.-F. Dalla Betta and the SMART Collaboration SCIPP, UC Santa Cruz DIT, Università di Trento,
        Speaker: Hartmut Sadrozinski (SCIPP)
        Slides
      • 13:55
        Sensor simulation and position calibration for the CMS Pixel Detector 20m
        V.Chiochia, M.Swartz, E.Alagoz University of Zurich, Paul Scherrer Institut, Johns Hopkins University
        Speaker: Vincenzo Chiochia (University of Zurich)
        Slides
      • 14:15
        Simulations Of Laser In Silicon Detectors. 15m
        Zbynek Drasal, Zdenek Dolezal, Peter Kodys, Pavel Reznicek IPNP, Charles University, Prague
        Speaker: Peter Kodys (CTU)
        Slides
      • 14:30
        Tests Of Laser In Silicon Detectors. 15m
        Peter Kodys, Zdenek Dolezal, Zbynek Drasal, Pavel Reznicek IPNP, Charles University
        Speaker: Peter Kodys (CTU Prague)
        Slides
      • 14:45
        coffee break 30m
      • 15:15
        Status and first results of an IR-lasertester setup in Freiburg 20m
        T. Ehrich 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, J. Härkönen 2, K. Jakobs 1, S. Kühn 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento
        Speaker: Thies Ehrich (University of Freiburg)
        Slides
      • 15:35
        Prototype module characterization with a beta source setup in Freiburg 20m
        S. Kühn 1, M. Boscardin 3, G.-F. Dalla Betta 3, S. Eckert 1, T. Ehrich 1, J. Härkönen 2, K. Jakobs 1, P. Luukka 2, M. Maassen 1, U. Parzefall 1, C. Piemonte 3, A. Pozza 3, S. Ronchin 3, E. Tuovinen 2, N. Zorzi 3. 1 University of Freiburg, 2 HIP, Helsinki, 3 ITC-irst, Trento
        Speaker: Susanne Kuehn (University of Freiburg)
        Slides
      • 15:55
        Development of Moderated p-spray Isolation Techniques for P-type Detectors at CNM. 20m
        M. Lozano(1), C. Fleta(1)(*), G. Pellegrini(1), F. Campabadal(1), J. M. Rafí(1), M. Ullán(1), S. Martí(2), M. Miñano(2) (1) CNM-IMB (CSIC), Barcelona, Spain (2) IFIC (CSIC), Valencia, Spain (*) Currently at University of Glasgow, UK
        Speaker: Manuel Lozano (CNM-IMB (CSIC), Barcelona)
        Slides
      • 16:15
        The Helsinki Beam Telescope 15m
        Speaker: Panja Luukka (HIP)
        Slides
      • 16:30
        Freiburg fan ins 15m
        Speaker: Simon Eckert (Uni Freiburg)
        Slides
      • 16:45
        Status of the RD50 6 inch wafer Production 20m
        Hartmut Sadrozinski SCIPP, UC Santa Cruz
        Speaker: Hartmut Sadrozinski (SCIPP)
        Slides
      • 17:05
        Discussion session on Full Detector Systems 25m
        Slides
    • 18:30 → 23:30
      Workshop dinner
  • Tuesday 27 June
    • 09:00 → 10:50
      Defect Engineering
      • 09:00
        Status report on new epi-devices 20m
        E. Fretwurst(a), A. Barcz(b), A. Furgeri(c), G. Lindström(a), F. Hönniger(a), G. Kramberger(d), E. Nossarzewska(e), I. Pintilie(f), R. Röder(g) (a) Institute for Experimental Physics, University of Hamburg (b) ITE Institute of Electron Technology, Warsaw (c) Institut fuer Experimentelle Kernphysik,University of Karlsruhe (d) Jozef Stefan Institute, University of Ljubljana (e) ITME Institute of Electronic Materials Technology, Warsaw (f) National Institute for Materials Physics, Bucharest (g) CiS Institut für Mikrosensorik gGmbH, Erfurt
        Speaker: Eckhart Fretwurst (Inst. for Exp. Phys., University of Hamburg)
        Slides
      • 09:20
        Measurement of Trapping Time Constants in Neutron Irradiated Pad Detectors 20m
        Jens Weber, Reiner Klingnberg Experimentelle Physik IV Universität Dortmund
        Speaker: Jens Weber (Universität Dortmund)
        Slides
      • 09:40
        Annealing studies of effective trapping times in silicon detectors 20m
        M. Batič, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik Jozef Stefan Institute
        Speaker: Matej Batic (Jozef Stefan Institute)
        Slides
      • 10:00
        Recent CCE measurements with neutron irradiated epi-Si pad detectors 20m
        V. Cindro, E. Fretwurst, V. Khomenkov, G. Kramberger, G. Lindstroem, I. Mandić, M. Mikuž, M. Zavrtanik, Jozef Stefan Institute, University of Hamburg, INFN Padova
        Speaker: Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)
        Slides
      • 10:20
        Coffee break 30m
    • 10:50 → 15:00
      Pad Detector Characterization
      • 10:50
        Study of radiation damage induced by protons and neutrons on heavily irradiated Magnetic Czochralski and Epitaxial silicon detectors 20m
        Manna Norman and SMART collaboration INFN Bari, Pisa, Firenze, Trento, Padova
        Speaker: Norman Manna (INFN Bari)
        Slides
      • 11:10
        Trapping of electrons and holes in p-type silicon irradiated with neutrons 20m
        V.Cindro1, G. Kramberger1, M. Lozano2, I. Mandić1, M. Mikuž1,3, G. Pellegrini2, J. Pulko1, M. Ullan2, M. Zavrtanik2 1-Jožef Stefan Institute, Ljubljana, Slovenia 2-Instituto de Microelectrónica de Barcelona, CNM-IMB (CSIC), Barcelona Spain 3-Faculty for Mathematics and Physics, University of Ljubljana, Slovenia
        Speaker: Vladimir Cindro (Jožef Stefan Institute, Ljubljana, Slovenia)
        Slides
      • 11:30
        Long term annealing of neutron irradiated detectors evaluated at LHC operational temperatures 40m
        E. Verbitskaya1, V. Eremin1, I. Ilyashenko1, Z. Li2, J. Härkönen3, V. Cindro4 1 Ioffe Physico-Technical Institute RAS 2 Brookhaven National Laboratory 3 Helsinki Institute of Physics 4 Jožef Stefan Institute, Ljubljana
        Speaker: Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)
        Slides
      • 12:10
        CV and CCE characterization of p-type MCZ Material 20m
        Herbert Hoedlmoser, Michael Moll (CERN)
        Speaker: Herbert Hoedlmoser (CERN)
        Slides
      • 12:30
        Lunch break 1h 30m
      • 14:00
        Discussion session on Defect Engineering and Pad Detector Characterization 1h
    • 15:00 → 17:40
      New Structures
      • 15:00
        Development of New 3d Si detectors at BNL and CNM 20m
        Z. Li1, W. Chen1, Y.H. Guo1, D. Lissauer1, D. Lynn1, V. Radeka1, M. Lozano2, G. Pellegrini2 1Brookhaven National Laboratory, Upton, NY 11973-5000, USA 2 Centro Nacional de Microelectrónica, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra (Barcelona), Spain
        Speaker: Zheng Li (BNL)
        Slides
      • 15:20
        coffee break 30m
      • 15:50
        Progress on 3D mask 15m
        R. Bates, G. Pellegrini Glasgow, CNM
        Speaker: Richard Bates (Glasgow University)
        Slides
      • 16:05
        3D detectors simulation and measurements 15m
        Celeste Fleta (Glasgow)
        Speaker: Celeste Fleta
        Slides
      • 16:20
        Position sensitive TCT measurements with 3D-sct detectors 20m
        V. Cindro, G. Kramberger, J. Langus, I. Mandić, M. Mikuž, M. Zavrtanik, M. Boscardin, G.F. Dalla Betta, C. Piemonte, A. Pozza, S. Ronchin, N. Zorzi Jozef Stefan Institute, IRST Trento
        Speaker: Gregor Kramberger (Jozef Stefan Instutute, Ljubljana)
        Slides
      • 16:40
        Characterisation of Irradiated 3D Detectors 20m
        Martin Hoeferkamp, Sally Seidel, Igor Gorelov University of New Mexico
        Speaker: Martin Hoeferkamp (University of New Mexico)
        Slides
      • 17:00
        Charge Collection in single-column 3D detectors 15m
        Firenze, UC Santa Cruz and ITC-irst
        Speakers: Hartmut Sadrozinski (SCIPP), Hartmut Sadrozinski (SCIPP)
        Slides
      • 17:15
        Discussion session on New Structures 25m
    • 17:40 → 19:00
      Collaboration Board Meeting
      • 17:40
        NIKHEF activities and infrastructure 15m
        Speaker: Fred Hartjes (NIKHEF)
        Slides
      • 17:55
        CB discussions 1h 5m
    • 20:00 → 22:00
      ATLAS Tracker Upgrade session
  • Wednesday 28 June
    • 09:00 → 12:40
      New Materials
      • 09:00
        I-V & CCE results of neutron irradiated GaN Schottky Detectors 20m
        J. Grant (1), R. Bates (1), W. Cunningham (1), A. Blue (1), J. Vaitkus (2), E. Gaubas (2), V. OShea (1) (1) Dept. of Physics & Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (2) Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9 -lll, 2040, Vilnius, Lithuania
        Speaker: James Grant (University of Glasgow)
        Slides
      • 09:20
        Properties of irradiated semi-insulating GaN 20m
        J.Vaitkus (1), J.P.Grant (2), E.Gaubas (1), V.Kazukauskas(1), V.Kalendra(1), G.Pobedinskas(1), S.Sakai (3), J.Storasta(1) Institute of Materials Science and Applied Research, (1) Vilnius University, Sauletekio 9-III, Vilnius, Lithuania; (2) Dept. Physics and Astronomy, Glasgow University, Glasgow, Scotland, UV; (3) Dept. Engineering, Tokushima University, Tokushima, Japan.
        Speaker: Juozas Vaitkus (Vilnius University)
        Slides
      • 09:40
        KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS 20m
        L.F. Makarenko*, M. Moll**, F.P. Korshunov***, S.B. Lastovski***, L.I. Murin*** * Belarusian State University, Minsk, Belarus **CERN, Geneva, Switzerland ***Institute of Solid State and Semiconductor Physics, Minsk, Belarus
        Speaker: Leonid Makarenko (Belarusian State University)
        Abstract
      • 10:00
        CHARACTERIZATION OF DEFECTS WITH SMALL CAPTURE CROSS-SECTION IN DETECTOR-GRADE SILICON BY DLTS and LAPLACE-DLTS 20m
        L.F. Makarenko*, J. Evans-Freeman**, V.P. Markevich***, S.B. Lastovski**** * Belarusian State University, Minsk, Belarus **Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK ***School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK ****Institute of Solid State and Semiconductor Physics, Minsk, Belarus
        Speaker: Leonid Makarenko (Belarusian State University)
        Abstract
      • 10:20
        coffee break 30m
      • 10:50
        Annealing of the vacancy-oxygen and divacancy-oxygen complexes in silicon 20m
        M. Mikelsen (1), E. V. Monakhov (1), B. S. Avset (2), B. G. Svensson(1) (1) Department of Physics, Physical Electronics, University of Oslo (2) SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo, Norway
        Speaker: Eduard Monakhov
        Slides
      • 11:10
        The influence of growth conditions on irradiation induced defects in 4H-SiC 20m
        I.Pintilie (a,b), B. G. Svensson (b), K. Irmscher (c), U. Grössner (b) and B. Thomas (d) (a) National Institute of Materials Physics, Bucharest-Romania, (b) Oslo University, Dept. of Physics, P.B. 1048 Blindern, N-0316, Oslo, Norway (c) Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., D 12489 Berlin, Germany (d) SiCED Electronics Development GmbH&Co. KG, D 91052 Erlangen, Germany
        Speaker: Ioana Pintilie (NIMP Bucharest)
        Abstract
      • 11:30
        Deep levels induced by very high dose neutron irradiation in 4H-SiC 20m
        A.Castaldini, A.Cavallini, F.Fabbri, F.Nava, P.Errani, V.Cindro Department of Physics University of Bologna Department of Physics University of Modena
        Speaker: Filippo Fabbri (Department of Physics, University of Bologna)
        Abstract
        Slides
      • 11:50
        Annealing effects on p+n junction 4H-SiC diodes after very high neutron irradiation 20m
        Francesco Moscatelli 1,3*, Andrea Scorzoni 2,1,3, Antonella Poggi 1, Mara Bruzzi 4, Silvio Sciortino 4, Stefano Lagomarsino 4, I. Mandic 5 and Roberta Nipoti 1 1 CNR- IMM Sezione di Bologna, via Gobetti 101, 40129 Bologna, Italy 2 DIEI , Università di Perugia, via G. Duranti 93, 06125 Perugia, Italy 3 INFN of Perugia, via Pascoli 1, 06123 Perugia, Italy 4 Dipartimento di Fisica, Polo Scientifico di Sesto Fiorentino,Via Sansone 1 Firenze Italy 5 Jozef Stefan Institute, Ljubljana, Slovenia.
        Speaker: Francesco Moscatelli (IMM-CNR)
        Slides
      • 12:10
        Discussion session on New Materials 30m
        Slides
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