Mössbauer studies of dilute magnetic semiconductors (IS-443)
R. Mantovan1, M. Fanciulli1, H.P. Gunnlaugsson2, G.Weyer2, R. Sielemann3, D. Naidoo4, K. Bharuth-Ram5, S. Olafsson6, G. Langouche7, K. Johnston8
1Laboratorio Nazionale MDM CNR-INFM, Agrate Brianza (MI) 20041, Italy
2Department of Physics and Astronomy,University of Aarhus, DK-8000 Århus C, Denmark
3Hahn-Meitner Institute, 14109 Berlin, Germany
4School of Physics, University of the Witwatersrand, WITS 2050, South Africa
5School of Physics, University of KwaZulu-Natal, Durban 4041, South Africa
6Physics Department, Science Institute University of Iceland, Iceland
7Department of Physics, Katholike Universiteit, Leuven, Belgium
8EP Division, CERN, CH-1211 Geneva 23, Switzerland
The study of materials showing multifunctional properties at room temperature (RT) is a challenging task for material science and of importance for future applications in spin-based electronics. The prediction of a Curie temperature above RT in Mn-doped ZnO [1] started a new field of research, with the aim to investigate magnetism in normally non-magnetic oxides. Despite the enormous experimental and theoretical efforts, the origin of the magnetism in (3d-elements) doped and pure ZnO is still a matter of debate in the scientific community. Calculations showing a vacancy-driven mechanism for the magnetism in ZnO have been proposed [2, 3], but clear experimental evidences for such mechanisms are still lacking.
In the framework of the experiment IS-443 at ISOLDE-CERN, we apply Mössbauer spectroscopy to investigate the magnetic properties in ZnO upon implantation with radioactive 57Mn+ (T½ = 1.5 min), decaying to the 57mFe Mössbauer state (T½ = 100 ns). We study the electronic and magnetic configurations of Fe atoms in the ZnO crystals, and the interaction between the Mn/Fe atoms with the defects induced during the implantation process [4]. Our results show that the majority of the Fe atoms are located on Zn sites in a high-spin Fe3+ state at 600 K, giving a strong magnetic contribution in ZnO. The formation/annealing of the magnetism in ZnO is interpreted as occurring/disappearing upon the association/dissociation of Mn/Fe complexes with the lattice defects created in the implantation process [4]. We present an overview of our experimental findings focusing on the essential role played by the lattice defects in observing magnetism in ZnO.
[1] T. Dietl, H. Ohno, F. Matsukura, J. Cibert., and D. Ferrand, Science 287, 1019 (2000).
[2] N. A. Spaldin, Phys. Rev. B 69, 125201 (2004).
[3] A. Debernardi and M. Fanciulli, Appl. Phys. Lett. 90, 212510 (2007).
[4] G. Weyer, H.P. Gunnlaugsson, R. Mantovan, M. Fanciulli, D. Naidoo, K. Bharuth-Ram, T. Agne, J. Appl. Phys., in print.