New results of E-TCT and Sr90 measurements with CMOS detectors produced on substrates with different resistivities will be presented. With Edge-TCT method the thickness of depleted layer can be estimated and its dependence on irradiation flunece was studied. Collected charge deposited by MIPs from Sr90 source in passive CMOS detectors was measured with external amplifier. The dependence of...
First Two Photon edge-TCT measurements of an HVCMOSv3 (ams 180 nm) irradiated with neutrons to a fluence of 7e15 neq/cm2 will be presented. The superior spatial resolution of TPA allows to accurately calculate the depletion width and effective doping concentration of the bulk. We attempt to profile the electric field inside the detector, including its distribution inside the Deep Implant. We...
The H35Demo is a large area High-Voltage CMOS demonstrator chip for tracking at LHC experiments. It is produced at the AMS foundry in 0.35 µm technology on wafers with resistivity ranging from 20 to 1000 Ohm cm.
Each chip includes two monolithic matrices using nMOS or CMOS transistors and 3x3 pixel test structures without electronics for sensor characterisations. H35demo samples of different...
Discussion of RD50 CMOS activity planing
The National Accelerator Center (CNA) is a user’s facility dedicated to multidisciplinary applications of particle accelerators. In this talk, the infrastructure available at CNA for Ion Irradiation and Characterization of Materials, based on a 3 MV tandem accelerator and a compact cyclotron for 18 MeV protons, will be briefly described. Recent activities carried out at CNA with potential...
For the HL-LHC pixel detector upgrades, pixel sensors with small pixel size of 50x50 and 25x100 µm² are envisaged.
At CNM, a first run of small-pitch 3D sensors was produced, which are designed to be matched to existing front-end chips like the ATLAS FE-I4. Pixel detectors were bump-bonded and assembled at IFAE Barcelona and tested in the laboratory and beam tests at CERN before and after...
Short range particles like alphas, low energy protons, ions, etc. are cost effective approaches for the damage production in silicon. The physics of capacitance DLTS application for study of such structures is discussed. The approach is illustrated by the results on silicon detectors irradiated by heavy ions.
This work deals with the bulk damage due to 23 MeV, 188 MeV and 23 GeV protons
to 200$\mu$m silicon pad sensors (bulk materials: FTH, MC or dd-FZ). I-V, C-V-f and
TSC measurements were performed at subsequent annealing steps.
Two challenges in performing TSC measurements will be pointed out: the first one
concerns the application of a forward current in the order of 1mA at the...
TSC Spectra – Point- versus Cluster-Defects
E. Fretwurst, E. Donegani, E. Garutti, R. Klanner
Institute for Experimental Physics, University of Hamburg
Abstract:
The analysis of TSC spectra of silicon diodes after irradiation with GeV protons or neutrons rely on the knowledge of the induced defects which can be either point-like or cluster-related defects. It was found that TSC signals which...
The standard Si microstrip detector samples were irradiated to high fluence in TRIGA reactor.
The magnetoresistance was investigated at different temperature, and the preliminary results of mobility dependence was obtained. It was found a decrease of magnetoresistance mobility up to 640 cm2/sV @ room T in samples irradiated to 1e17 neutron/cm2 fluence. The mobility was near to the same in...
Radiation damage in n-type high-resistivity FZ silicon wafers with a nitrogen concentration of ~1.5E15 cm^-3 exposed to 23-MeV protons has been studied by using high-resolution photoinduced transient spectroscopy (HRPITS), infrared absorption (FTIR) and photoluminescence (PL) and measurements. In order to determine the evolution of the radiation defect structure with increasing the proton...
Nitrogen and oxygen enriched FZ silicon was investigated with respect to the radiation hardness under electron irradiation. P-in-n pad detectors were fabricated on four groups of FZ silicon wafers (FZ, NFZ, DOFZ and DOPFZ). Group NFZ was enriched with nitrogen during crystal growth. The DOFZ and DOPFZ groups were enriched with oxygen by oxygen indiffusion during prolonged annealing. The DOPFZ...
Results from the study of HFS detectors from RMD will be presented. Some of these sensors have been subjected to neutron irradiation at the Jožef Stefan Institute (Ljubljana, Slovenia). The fluences to which these were exposed are 3E13, 6E13, 3E14 and 1E15 n/cm^2. TCT and CV/IV measurements were performed on irradiated and unirradiated samples. The results obtained from these studies will be...
Silicon photomultipliers (SiPMs), thanks to their excellent performance, are becoming the photodetectors of choice for many applications.
One major limitation, in particular for their use at high-luminosity colliders, is the radiation damage by hadrons.
In this work, SiPMs with 4384 pixels of $15 \times 15$ $\mu$m$^2$ size produced by KETEK have been irradiated by reactor neutrons to six...
For Ultra-fast Silicon Detectors, we are using thin Low-Gain Avalanche Diodes.
We report results from a series of measurements, including electrical characterization, charge collection and time resolution in beam tests.
The most important results from the lates LGAD runs at
CNM and FBK will be presented.
Last developments on LGAD fabrication, as well as future plans, will be presented.
We report on the status of the Ultra fast silicon Detector (USFD). UFSD are
silicon detectors based on the Low Gain Avalanche Diodes (LGAD); they LGAD
have internal moderate gain (~10 order of magnitude), they exhibit
fast and large signal and the signal is about 10 larger than the standard
silicon detector. Thanks to their properties they are good candidates
for time applications.
We...
The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness ($300$ and $50 \mu m$) and gain (between $5$ and $20$) have been recently designed and manufactured...
Results from the the test beam (at CERN's SPS) and TCT characterization of the first i-LGAD and Strip LGAD sensors will be presented.
50 um LGADs from the recent CNM production were studied before and after irradiation with neutrons in Ljubljana to 3e14 and 1e15 neq/cm2. The gain was measured with TCT and Sr90 beta particles. The time resolution was measured with 120 GeV pions in two beam tests at CERN SPS in June/July and September 2016.
For conventional planar strip sensors the interstrip resistance was observed to have a significant variation with ionizing dose and operational temperature. In principle, it could become low enough to result in lateral charge spread across several strips leading to signal loss and deterioration of the positional resolution. There are two aspects of such evaluation that can be improved: 1) The...
The extremely harsh radiation environment of the future trackers necessitates the upgrade of the existing silicon detector technologies. The LGAD detectors, based on their internal charge multiplication mechanism, have attracted a lot of interest in the silicon detector community. However, it has been reported that a rapid decrease in the LGAD gain with irradiation is limiting these devices...
The dependencies of the collected charge versus bias voltage and fluence for LGADs are calculated to fit experimental data. The calculations are based on two models of radiation degradation in Si detectors previously developed at the Ioffe Institute and adapted to the LGAD structure: 1) a model of two effective energy levels of radiation-induced defects responsible for the electric field...
The future upgrading of detectors for the high luminosity colliders requests the detectors that are capable work in the conditions where fluence of neutrons exceeds 1e17 cm-2 (e.g., the forward callorimeter in CMS). We make an attempt to investigate the possibilities of GaN detectors that works at room and higher temperature.
The dynamic characteristics of the GaN p-i-n avalanche...
In this talk I will present recent results from TCAD simulations using Silvaco tools.
In particular I will focus on p-bulk sensors, both standard diodes and LGADs.
At the beginning I will present a comparison of two radiation damage models for the bulk (Perugia, New Delhi).
Then I will comment on the impact of radiation damage model parameters uncertainties on macroscopic observables....
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiment, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ n$_{eq}$/cm$^{-2}$, and the IEL (Ionizing Energy Loss) dose
in the SiO$_2$ is 5 MGy. The optimization of the pixel sensors and the understanding of...
The UT working group is developing the Upstream Tracker for the LHCb experiment upgrade. Four testbeams were carried out in 2015 and 2016 to assess the performance of both full size and mini prototype silicon strip detectors. We present results on the performance of these sensors at various levels of sensor irradiation.
The LHCb Vertex Locator (VELO) is a silicon micro-strip detector operating extremely close to the LHC proton beams. During nominal data-taking the innermost active strips are as close as ~8 mm to the beams. This proximity makes the LHCb VELO an ideal laboratory to study radiation damage effects in silicon detectors.
There are numerous challenges for VELO, both in proton and ion runs.
The...
As a result of the radiation damage expected at HL-LHC, the collected charge and the Lorentz angle on the silicon strip sensors present at the detectors is expected to change. Therefore, the collected charge and the Lorentz angle are measured on non-irradiated and highly irradiated future ATLAS silicon micro-strip sensors at the DESY II test beam. The results of the change in the collected...
We will present a summary of long term annealing studies at Room Temperature and 60°C, using irradiated p-type sensors up to a fluence of 2e15 n_eq/cm^2. Measurements include the charge collection and leakage current behavior, and based on this estimate the scaling factor between the two temperatures and the behavior of the effective doping concentration.
Ideal photodiodes can detect all incoming photons independently of the wavelength, angle or intensity of the incident light. Present-day photodiodes notably suffer from optical losses and generated charge carriers are often lost via recombination. Here, we demonstrate a device with an external quantum efficiency above 96% over the wavelength range 250–950 nm. Instead of a conventional p–n...
Latest productions of thin n-in-p pixel sensors designed at MPP will be presented. Sensors of thicknesses of 50, 100 and 150 um have been produced at ADVACAM and CiS (100 and 150 um) and interconnected to FE-I4 chips. At ADVACAM SOI wafers were employed, while at CiS anisotropic KOH etching was carried out to create backside cavities in the wafer leaving thicker frames around each single...
The aim of the talk is to show at the RD50 community a proposal for the definition of a RD50 project with the goal of the realization of a edgless detector at FBK.
Respect to the technological approach that used up now so passivate the trench with doping and filling the trench , we suggest to use the idea proposed by Resarch Naval Insitute ( Fadeyev) to use the allumina as passivation...
Recently, Fraunhofer ISE developed a technology with the potential to epitaxially produce very cost-efficient thin-films of 50-200 um thickness for the solar cell industry, aiming to lower the price for a 156mm by 156mm substrate to below the ~EUR level. Such thicknesses are precisely what is required for HL-LHC applications and the exitaxial growth might yield some additional benefits.
I...
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