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Siegfried Bethke (Max-Planck-Institut fur Physik (DE))19/02/2018, 10:00
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Dominik Dannheim (CERN)19/02/2018, 10:20
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Christian Koffmane (MPI für Physik)19/02/2018, 10:40
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19/02/2018, 11:00
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Kristof De Bruyn (NIKHEF (NL))19/02/2018, 11:30
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Sarah Seif El Nasr (University of Bristol (GB))19/02/2018, 11:50
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Hongtao Yang (University of California Berkeley (US))19/02/2018, 12:10
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Marco Meschini (Universita e INFN, Firenze (IT))19/02/2018, 14:00
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Gian Franco Dalla Betta (Universita degli Studi di Trento (IT))19/02/2018, 14:20
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Maurizio Boscardin (Fondazione Bruno Kessler (FBK))19/02/2018, 14:40
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Joern Lange (IFAE Barcelona)19/02/2018, 15:00
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Andrea Coccaro (INFN Genova (IT))19/02/2018, 15:15
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19/02/2018, 15:30
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Marco Povoli (SINTEF MiNaLab)19/02/2018, 16:00
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Angelo Loi (INFN - National Institute for Nuclear Physics)19/02/2018, 16:15
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Gervasio Gomez (Universidad de Cantabria (ES))19/02/2018, 16:30
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Helge Christoph Beck (Georg August Universitaet Goettingen (DE))19/02/2018, 16:45
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Valentina Sola (Universita e INFN Torino (IT)), Valentina Sola (INFN Torino)19/02/2018, 17:00
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Tomasz Hemperek (University of Bonn (DE))19/02/2018, 17:15
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Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))20/02/2018, 09:00
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Georg Steinbrueck (Hamburg University (DE))20/02/2018, 09:15
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Arno Kompatcher (CIS )20/02/2018, 09:30
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Dmytro Hohov (Université Paris-Saclay (FR))20/02/2018, 09:45
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Dr Marco Povoli (SINTEF MiNaLab)20/02/2018, 10:00
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Kevin Connor Nash (Rutgers State Univ. of New Jersey (US))20/02/2018, 10:45
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88. Research and development of new radiation tolerant pixel Silicon sensors for the high-luminosityDavide Zuolo (Universita & INFN, Milano-Bicocca (IT))20/02/2018, 11:00
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David-Leon Pohl (University of Bonn (DE))20/02/2018, 11:15
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Christian Riegel (Bergische Universitaet Wuppertal (DE))20/02/2018, 11:30
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Stefano Terzo (IFAE Barcelona (ES))20/02/2018, 11:45
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D M S Sultan (Universite de Geneve (CH))20/02/2018, 12:00
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Tianyang Wang (University of Bonn (DE))20/02/2018, 12:15
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Mr Matthew Franks (University of Liverpool)20/02/2018, 12:30
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Marko Mikuz (Jozef Stefan Institute (SI))20/02/2018, 12:45
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Hartmut Sadrozinski (SCIPP, UC santa Cruz)20/02/2018, 13:55
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Nicolo Cartiglia (INFN Torino)20/02/2018, 14:10
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Yoshinobu Unno (High Energy Accelerator Research Organization (JP))20/02/2018, 14:20
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Marco Mandurrino (Universita e INFN Torino (IT))20/02/2018, 14:40
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Matteo Centis Vignali (CERN)20/02/2018, 14:55
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Giovanni Paternoster (Fondazione Bruno Kessler (FBK))20/02/2018, 15:10
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Roberta Arcidiacono (Universita e INFN Torino (IT))20/02/2018, 15:50
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Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))20/02/2018, 16:05
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Marcos Fernandez Garcia (Universidad de Cantabria (ES))20/02/2018, 16:25
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Thomas Bergauer (Austrian Academy of Sciences (AT))20/02/2018, 16:40
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Armin Fehr (CERN, University of Bern)20/02/2018, 17:00
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Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))20/02/2018, 17:15
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Daniel Muenstermann (Lancaster University (GB))20/02/2018, 17:30
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Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))21/02/2018, 09:00
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Maciej Witold Majewski (AGH University of Science and Technology (PL))21/02/2018, 09:25
The VErtex LOcator (VELO) is a silicon-strip detector located around the interaction region of LHCb.
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It is placed as close as 8 mm from the LHC beams undertaking a very high radiation damage.The sensors have been exposed to fluences up to $3.5 \times 10^{14} 1 MeV-neq/cm ^{2}$. The digital processing performed on back-end boards requires approximately 1 million parameters.
Dedicated runs are... -
Lorenzo Rossini (Università degli Studi e INFN Milano (IT))21/02/2018, 09:40
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Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))21/02/2018, 09:55
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Arianna Morozzi (University and INFN, Perugia (IT))21/02/2018, 10:10
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Matthias Wolfgang Würl (University of Munich (LMU))21/02/2018, 10:55
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Carlo Civinini (Universita e INFN, Firenze (IT))21/02/2018, 11:15
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Anna Vignati (INFN - National Institute for Nuclear Physics)21/02/2018, 11:35
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Wolfgang Treberspurg (MPE)21/02/2018, 11:50
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Marcello Campajola (INFN and University of Naples "Federico II")21/02/2018, 12:10
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Francesco Di Capua (Istituto Nazionale di Fisica Nucleare (INFN))21/02/2018, 12:25
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Ester Ricci (Universita degli Studi di Trento è INFN (IT))21/02/2018, 12:40
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Alexander Bähr (MPG-HLL)21/02/2018, 13:55
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Matteo Porro (European XFEL GmbH)21/02/2018, 14:10
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Giacomo Borghi (FBK)21/02/2018, 14:30
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Paolo Brogi (Universita degli studi di Siena (IT)), Paolo Brogi (Sezione di Pisa (INFN))21/02/2018, 14:50
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Johannes Treis (MPG Semiconductor Laboratory)21/02/2018, 15:10
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Leonardo Di Venere (INFN - National Institute for Nuclear Physics)21/02/2018, 15:55
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Jiaguo Zhang (Paul Scherrer Institut)21/02/2018, 16:15
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Giovanni Paternoster (Fondazione Bruno Kessler (FBK))21/02/2018, 16:35
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Arianna Morozzi (INFN, Perugia (IT))
Silicon detector operations at HL-LHC expected fluences will pose severe challenges in terms of tracking capabilities and radiation resistance.
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TCAD tools can be therefore proficiently exploited in order to optimize detector performance in terms of charge collection, which mainly determines the detection efficiency and position resolution. To this purpose, proper combination of surface and... -
Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))
An in-depth study of a p-in-p LGAD sensor (Inverse-LGAD) is presented. Contrary to the conventional LGAD, the baseline device for the HL-LHC mip timing detectors, the I-LGAD has a non-segmented deep p-well (the multiplication layer). Therefore, I-LGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting...
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Paolo Brogi (Sezione di Pisa (INFN))
The APiX sensor is a position-sensitive detector operating in Geiger-mode regime.
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This novel device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts.
This concept allows to reduce the material budget and the power consumption in the presence of a high... -
Gian-Franco Dalla Betta (INFN and University of Trento)
Using 3D diodes, we have investigated the radiation tolerance of 3D sensors from the first batch fabricated at FBK on Si-Si DWB 6” substrates with a single-sided technology. The active layer thickness is 130 $\mu$m. Diodes reproducing the same layout details of their parent, small-pitch pixel sensors were irradiated with neutrons at the TRIGA Mark II reactor at JSI (Ljubljana, Slovenia) up to...
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Pedro Dias De Almeida (FCT Fundacao para a Ciencia e a Tecnologia (PT))
The so-called acceptor removal effect has been studied on a set of p-type silicon sensors irradiated with protons and neutrons up to 7E15 neq/cm2. Two sets of diodes were used: thin epitaxial diodes with different resistivities (10, 50, 250 and 1000 Ohm.cm) and high resistivity float zone diodes with different thicknesses (100, 150, 200 and 285 um). CV, IV and TCT measurements were performed...
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D M S Sultan (Universite de Geneve (CH))
Characterization of H35 HV-CMOS Sensors before and after Proton Irradiations
ABSTRACT
In view of applications at the High Luminosity LHC (HL-LHC) upgrade, we developed a new generation of radiation tolerant High Voltage CMOS (HV-CMOS) sensors, that was fabricated at AMS Foundry (Austria) in 350 nm...
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Georg Steinbrueck (Hamburg University (DE))
The LHC is planning an upgrade program which will bring the luminosity up to about 7.5E34 cm-2s-1 in 2027, with the goal of an integrated luminosity of 3000 fb-1 by the end of 2037. This High Luminosity scenario, HL-LHC, will present new challenges of higher data rates and increased radiation tolerance for the pixel detector (2E16 neq/cm2, or equivalently 1 Grad, is expected for the inner...
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Dmytro Hohov (Université Paris-Saclay (FR))
The first part of the work is devoted to the study of the performance of active and slim edge ATLAS planar pixel sensors (PPS) in various test conditions including irradiation fluences (1e15 and 2e15 n$_{eq}$cm$^2$ ) and sensor inclination. For the performing of testbeam measurements CERN and DESY beam facilities have been used.
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In the second part of the present work another method to... -
Tianyang Wang (University of Bonn (DE))
The Inner Detector of the ATLAS experiment will be replaced by a new Inner Tracker (ITk) after the high-luminosity upgrade of LHC, which requires major improvements of the silicon pixel detectors in terms of radiation hardness, rate capability, etc. Monolithic CMOS pixels with depleted sensing volume (DMAPS) are part of the R&D program for the ITk outer pixel layers. Manufacturing these...
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Angelo Loi (INFN - National Institute for Nuclear Physics)
In future high luminosity LHC experiments, planned over the next 10 years, the number of collisions per unit of time is expected to increase by more than a factor of 2. The new experimental conditions require new detector systems with increased performances compared to the current state of the art. In this context, spatial and especially time resolution play an increasingly important role. The...
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Dr Wolfgang Treberspurg (Max-Planck-Institut für extraterrestrische Physik)
The ATHENA X-ray observatory was selected as ESA’s second large-class mission, scheduled to be launched in 2028. The Wide Field Imager (WFI) is one of its two primary instruments and will provide single photon spectroscopy in an energy band of 0.2 keV to 15 keV. To achieve unprecedented spectroscopic and imaging capabilities with a large field of view of 40' x 40', its focal plane is covered...
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Marco Povoli (SINTEF MiNaLab)
SINTEF MiNaLab has a long-standing experience in the production of planar radiation detectors on N-type silicon substrates. In recent years, a growing interest in sensors produced on P-type substrates was demonstrated on many fronts. N-on-P sensor technology is now becoming the "to-go choice", especially in fields where radiation hardness is crucial (e.g. CERN experiments) and/or a faster...
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Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
Low-Gain Avalanche Detectors (LGADs) have potential to be a critical element in applications for collider physics, medical instrumentation, etc., with its high spatial and timing resolution. The strip-type LGAD detector is required in large-scale application for covering wide area with low cost. We have fabricated LGAD strip sensors, DC-type, together with LGAD diodes, and evaluated their...
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Dr Marcello Campajola (INFN and Univ. of Naples "Federico II")
The next generation of HEP space experiments impose extreme requirements on their detectors, that cannot be still satisfied by PMTs. An appealing alternative is offered by Single-Photon Avalanche Diode (SPAD) devices manufactured in deep sub-micron CMOS processes, which offer sensitivity down to the single photon level, with pico-second time resolution and micrometric position resolution....
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Mr Matthew Franks (University of Liverpool)
A Phase II upgrade is proposed for ATLAS to take full advantage of the upcoming High Luminosity-LHC (HL-LHC). High Voltage-CMOS (HV-CMOS) pixel detectors are considered for the outer pixel layers of the Inner Tracker (ITk), where detectors will need to cover a large area and withstand irradiation to fluences of the order $10^{15} n_{eq}cm^{–2}$. Monolithic HV-CMOS detectors remove the need for...
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Dr Johannes Treis (MPG Semiconductor Laboratory)
We present a camera system for high time-resolved direct electron imaging on a TEM furnished with a pulsed electron source to observe dynamic processes in real space. The sensors use an SOI detector substrate with 50 $\mu$ to 30 $\mu$ thickness. The high intensity of the electron source requires tailored DEPFET devices with inherently high signal-to-noise, high speed readout capability, and...
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Daniel Muenstermann (Lancaster University (GB))
The AMS (a)H18 and H35 processes are two of the most promising candidates for HV-CMOS detectors. One issue are their low standard resistivity (10-20 Ohm*cm) and therefore small depletion layers before irradiation of only about 10-20um.
While this issue was addressed by using higher-resistivity substrates (up to 1 kOhm*cm) in dedicated runs, the behaviour of the standard substrate after...
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Igor Mandic (Jozef Stefan Institute (SI)), Marko Mikuz (Jozef Stefan Institute (SI))
Two sets of passive CMOS detectors were studied: thinned with processed and metalized backplane and not thinned without backplane processing with substrate biased through the implant on top of the device. Detectors were irradiated with neutrons in reactor in Ljubljana. Collected charge was measured with electrons from Sr-90 source using an external amplifier. Depletion depth and charge...
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Giacomo Borghi (FBK)
ARDESIA is an SDD-based multichannel x-ray spectrometer optimized for synchrotron applications, such as X-ray fluorescence (XRF) and X-ray absorption fine structure (XAFS) techniques. The spectrometer was developed to simultaneously achieve high count-rate (>1 Mcps/chanel) and high energy resolution (below 150 eV FWHM at shaping time faster than 200 ns) for soft x-rays detection.
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The module is... -
Audrey Ducourthial (Centre National de la Recherche Scientifique (FR))
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
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The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with
pixel sensors, since it is radiation hard and cost effectiveness.
The paper reports on the performance of 130 µm thick n-in-p planar pixel... -
Kazuyoshi Carvalho Akiba (Federal University of of Rio de Janeiro (BR))
The Large Hadron Collider Beauty (LHCb) detector is a flavour physics detector, designed to detect decays of b- and c-hadrons for the study of CP violation and rare decays. At the end of Run-II, many of the LHCb measurements will remain statistically dominated. In order to increase the trigger yield for purely hadronic channels, the hardware trigger will be removed and the detector will...
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Lorenzo Rossini (Università degli Studi e INFN Milano (IT))
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15...
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Ester Ricci (Universita degli Studi di Trento è INFN (IT))
In recent years, tracking charged particles has seen the rise of a new technology, based on Monolithic Active Pixel Sensors. With respect to silicon micro-strips and hybrid pixels, MAPS allow for low material budget and cheap sensors production using standard CMOS commercial technologies.
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Being developed for High Energy Physics, MAPS are currently proposed for uses in Nuclear Physics,... -
Anna Vignati (INFN - National Institute for Nuclear Physics, Torino (IT))
The MoVeIT project of the INFN-CSN5 aims at studying, modeling and verifying the biological impact on charged particle therapy of some complex physical and biological effects, so far neglected in treatment planning systems (TPS) currently used. The preclinical testing of biologically optimized TPS requires dedicated devices for its validation, able to analyze beam particle fluences and beam...
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Andre Schoening (Ruprecht Karls Universitaet Heidelberg (DE))
Mupix8 is the latest and largest prototype of a High Voltage-Active Monolithic Active
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Pixel Sensor (HV-MAPS) based on the 180 nm HV-CMOS process from AMS. It was
developed for the Pixel Tracker of the Mu3e-Experiment at PSI which will
search for the lepton flavor violating process muon -> eee with unprecedented
sensitivity.
The Mupix8 prototype has a size of 2x1 cm2, integrates about 25000... -
Andre Schoening (Ruprecht Karls Universitaet Heidelberg (DE))
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Arno Emanuel Kompatscher (CIS Institut fuer Mikrosensorik GmbH (DE))
The CiS Forschungsinstitut fuer Mikrosensorik is engaged in developments of radiation detector technologies on several different fields. Current projects include active edge sensors, 3D sensors as well as new quality control methods.
One active edge sensor run is finished. Three different side wall doping methods (plasma implantation, ion implantation, diffusion) have been tested in...
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Nicolo Cartiglia (INFN Torino)
In this presentation, I will report on a study of the onset of shot noise in irradiated LGAD sensors. High fluence generates high current, which leads to large shot noise. However, most of the leakage current measured in irradiated sensors does not contribute significantly to the noise, indicating that is collected without multiplication. We will show the strong relationship between noise and...
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Hongtao Yang (University of California Berkeley (US))
The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of 2 x 10^34 cm-2 s-1 recently surpassed.
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The key... -
Stefano Terzo (IFAE Barcelona (ES))
Depleted Monolithic Active Pixel Sensors (DMAPS) based on High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the future pixel detector of the ATLAS Inner Tracker (ITk) at HL-LHC.
The H35DEMO is a large area demonstrator chip for ITk developed by the collaboration of KIT, IFAE, University of Liverpool and University of Geneva....
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Giovanni Paternoster (Fondazione Bruno Kessler)
Over the last few years, Fondazione Bruno Kessler, in collaboration with the universities of Trento and Turin, has been involved in the development of silicon sensors with low internal gain (x10-x20), the so-called LGAD or UFSD (Ultra Fast Silicon Detectors). Despite such a technology exhibits outstanding performance in terms of timing resolution, it is well known that LGADs are affected by a...
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Claudia Gemme (INFN e Universita Genova (IT))
Due to their radiation hardness, 3D sensors are a promising option for the innermost pixel layers at the High
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Luminosity LHC. However, the required very high hit-rate capabilities,
increased pixel granularity, extreme radiation hardness, and reduced
material budget call for a device downscale as compared to existing 3D
sensors, involving smaller pitch (e.g., 50×50 or 25×100 µm2 ),... -
Matteo Centis Vignali (CERN)
For their operation at the CERN High Luminosity Large Hadron Collider (HL-LHC), the ATLAS and CMS experiments are planning to implement dedicated systems to measure the time of arrival of minimum ionizing particles with an accuracy of about 30 ps.
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The timing detectors will be subjected to radiation levels corresponding up to a 1-MeV neutrons fluence ($\Phi_{eq}$) of $10^{15}$ cm$^{-2}$ for the... -
Joern Lange (IFAE Barcelona)
At the High-Luminosity upgrade of the Large Hadron Collider (HL-LHC), the particle density will increase and fluences up to 2.5$\times10^{16} n_{eq}$/cm$^2$ are expected for the innermost pixel layer of the ATLAS and CMS experiments after an integrated luminosity of 4,000 fb$^{-1}$. To meet these requirements, a new generation of CNM 3D pixel sensors with small pixel sizes of 50x50 and 25x100...
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Armin Fehr (CERN, University of Bern)
For operation at the High Luminosity LHC, the ATLAS detector will be upgraded in 2025-2026. Its Inner Detector will be replaced by an all-silicon tracking system called the Inner Tracker (ITk), consisting of an inner pixel detector of five layers and an outer strip detector. This detector will cope with the harsher radiation environment and the higher pile-up of collisions.
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Sensors produced in... -
David-Leon Pohl (University of Bonn (DE))
The utilization of radiation-hard CMOS processes for sensors of hybrid pixel-detectors is investigated. The benefit of such an approach is industrial sensor fabrication on large wafers with potential high throughput and yield, and low costs. Further, CMOS processes offer multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and...
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Francesco Di Capua (Università di Napoli Federico II)
CMOS SPADs are recently gaining the attention of the scientific and industrial world, because of their excellent performance. Due to their working principle, they are sensitive down to the single photon level with no need of an external amplification and provide a temporal resolution, which reaches tens of picoseconds. Further, the CMOS integration, allowed integrating the auxiliary...
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Enrico Junior Schioppa (CERN)
Monolithic CMOS sensors represent a potential alternative to hybrid pixel detectors for the future of high energy physics experiments.
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Over the last few years, the TowerJazz 180nm CMOS process has been under investigation as a candidate for pixel detectors at the High Luminosity Large Hadron Collider (HL-LHC).
First tests on prototype chips have shown that this technology can qualify for the... -
Hartmut Sadrozinski (University of California,Santa Cruz (US))
The performance of Ultra-fast Silicon Detectors (UFSD) has been measured pre-rad and after neutron irradiation up to 6e15 n/cm^2.
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Of special interest are UFSD with 35 and 50 micron thickness.
The measured time resolution is traced back to the evolution with fluence of internal gain, rise time and noise. -
Davide Zuolo (Universita & INFN, Milano-Bicocca (IT))
The CMS experiment has a vast R&D program on silicon pixel sensors for the HL-LHC upgrades. In this talk we will focus on activities and results obtained with 100 and 130um thick planar pixel sensors produced by FBK, in the framework of a collaborative agreement with INFN. Pixel single-chip modules have been tested in the Fermilab Test Beam Facility before and after proton irradiation, during...
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Dr Marco Mandurrino (Universita e INFN Torino (IT))
In this contribution we describe the project "Resistive AC-Coupled Silicon Detectors" (RSD), a novel approach to the design of Low-Gain Avalanche Detectors (LGAD) that will eliminate the problem arising from the segmentation of the gain layer.
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RSD are essentially LGAD designed to reach the limit of 100% in the fill-factor. Such scheme is based on the presence of a resistive n-electrode,... -
Dr Carlo Civinini (INFN-Firenze)
Proton Computed Tomography (pCT) is a medical imaging method aimed at improving
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the accuracy of treatment planning in hadron therapy through a direct measurement
of tissues' stopping power distribution. A pCT image can be obtained,
with a single event approach, by directly measuring each proton position and direction
upstream and downstream the volume under study using a tracker and, at... -
Mr Matthias Würl (LMU Munich)
Silicon detectors are widely used in medical applications, ranging from imaging to dosimetry, treatment verification and quality assurance in radiation therapy. Also in a pre-clinical environment, they exhibit great potential for beam diagnostic of novel ion sources, such as laser-driven ion (LION) sources. There is major interest in pushing this unique acceleration mechanism towards...
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Giovanni Paternoster (Fondazione Bruno Kessler (FBK))
Recent developments in Silicon Photomultiplier (SiPM) technology make it an attractive choice for large-scale Physics experiments, as an alternative to traditional Photomultiplier Tubes (PMTs). Potential advantages of SiPMs include high sensitivity, compactness, lower operating voltage, low cost, high gain uniformity and high radio purity.
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Near Ultra Violet, High Density (NUV-HD) SiPM... -
Thomas Bergauer (Austrian Academy of Sciences (AT))
The CMS experiment at CERN will undergo significant improvements during the so-called Phase-II Upgrade to cope with a 10-fold increase in integrated luminosity with the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. Consequently, the CMS collaboration is designing a High Granularity...
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Dr Marco Povoli (SINTEF MiNaLab)
SINTEF in collaboration with University of Oslo have been performing R&D activities on 3D detectors with the aim to qualify to be a production site for ITk upgrade. In this context, a 3D detector fabrication run has been completed recently with very promising results. Various sensor geometries with active edges were implemented, and the fabrication was carried out on 6-inch Si-Si wafers with...
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Maurizio Boscardin (FBK Trento)
Since 2014, within the framework of the INFN-FBK “Phase 2” R&D program and the AIDA 2020 project, FBK has developed a new generation of small-pitch, thin 3D pixel sensors oriented to the innermost tracking layers of ATLAS and CMS at the High-Luminosity LHC (HL-LHC). Sensors are made on either Si-Si Direct Wafer Bonded or SOI 6” substrates with a single-sided technology, while ensuring the bias...
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Helge Christoph Beck (Georg August Universitaet Goettingen (DE))
Silicon is the standard material for particle detector sensors. Especially in high radiation environments diamond is a suitable alternative. In comparison to silicon it is more radiation hard but a smaller signal is generated per particle. Planar pixelated diamond detectors, read out by the FE-I4 chip, are installed in the ATLAS experiment. The current status and the performance of the Diamond...
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Kevin Connor Nash (Rutgers State Univ. of New Jersey (US))
One key feature of the HL-LHC outer tracker upgrade is the use of "pt modules" to reject low pt tracks and reduce the required L1 bandwidth. These consist of two closely spaced silicon layers which are capable of creating "stubs", which are pairs of hits compatible with tracks above a certain pt threshold. These modules are divided into the "PS" and "2S" types, and are designed to work in...
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Elisa Fumagalli (INFN e Universita Genova (IT))
During the $2023-2024$ shutdown, the Large Hadron Collider (LHC) will be upgraded to reach an instantaneous luminosity up to 7×10 $cm^{-2} s^{-1}$. This upgrade of the accelerator is called High-Luminosity LHC (HL-LHC). ATLAS and CMS tracking detectors will be replaced to meet the challenges of HL-LHC: an average of 200 pile-up events in every bunch crossing and an integrated luminosity of...
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Elisa Fumagalli (INFN e Universita Genova (IT))
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Roberta Arcidiacono (Universita e INFN Torino (IT))
I will report on the radiation resistance of 50-micron thick LGAD detectors, manufactured at the Fondazione Bruno Kessler, employing several different types of gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to φn...
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Julien-Christopher Beyer (Max-Planck-Institut fur Physik (DE))
In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4 × 1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection...
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Marco Bomben (LPNHE & Université Paris Diderot, Paris (FR))
Radiation-induced damage in silicon can be modeled in TCAD simulations through effective states in the energy gap,
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what we call radiation damage models.
After a brief introduction about radiation-induced damage in silicon, in this talk I will present you some of the available
radiation damage models, how to implement them in TCAD tools and what are typical observables you can study in... -
Dr Gervasio Gomez (Universidad de Cantabria (ES))
Silicon pixel sensors of cell size 50um x 50um fabricated at CNM using 3D, doubled-sided n-on-p technology were bump-bonded to ROC4Sens readout chips and tested in an electron test beam at DESY. We show initial results of efficiency, charge collection, charge sharing, noise and resolution for different track incidence angles. The sensor+ROC assemblies were later irradiated with protons to a...
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Dr Sarah Seif El Nasr (University of Bristol (GB))
The High Luminosity LHC scenario, HL-LHC, with a planned instantaneous luminosity of the upgraded machine of 5x10^34 cm^-2 s^-1 by year 2028, and an integrated luminosity of 3000 fb^-1 by the end of year 2037, requires the complete replacement of the CMS Tracker detector to cope with the extremely challenging new operating conditions. The talk will focus on the CMS Outer Tracker system for the...
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Valentina Sola (Universita e INFN Torino (IT)), Ada Solano (Universita' di Torino e INFN (IT))
The CMS-TOTEM Precision Proton Spectrometer (CT-PPS) allows extending the LHC physics program by detecting protons in the very forward regions of CMS. CT-PPS consists of tracking and timing detectors installed along the beam line at ~210 m from the CMS interaction point on both sides of the LHC tunnel. In 2017 the tracking system consisted of a station of silicon strip detectors and a station...
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Marco Meschini (Universita e INFN, Firenze (IT))
The talk will report on the INFN research activity, in collaboration with FBK foundry, which is aiming at the development of new, thin, n-in-p pixel sensors for the CMS HL-LHC (Phase-2) upgrade. The talk will illustrate the main aspects of the research program, starting from the sensor design and fabrication technology, with an overview on next plans using both Direct Wafer Bonded (DWB) and...
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Alexander Bähr (MPG HLL)
Currently, several development activities for the European Solar Telecope, a next generation, large aperture solar telescope are ongoing. Among its observational capabilities, EST will provide high time resolution, high precision polarimetric imaging of the solar atmosphere that can be utilized to determine the magnetic fields within and their temporal evolution. For these measurements, a new...
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Leonardo Di Venere (INFN - National Institute for Nuclear Physics)
The Italian Institute of Nuclear Physics (INFN) is involved in the development and construction of a Silicon Photomultiplier (SiPM) camera for the prototype of the Schwarzschild-Couder Telescope (pSCT) proposed for the Cherenkov Telescope Array (CTA).
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SiPMs are particularly suitable to detect the fast and low-intensity Cherenkov light emitted in the atmosphere. Fondazione Bruno Kessler (FBK)... -
Marcos Fernandez Garcia (Universidad de Cantabria (ES))
Low Gain Avalanche Diodes (LGAD) with different implantation dose and irradiated with 24 GeV/c protons at CERN-PS up to a fluence of 1e14 1 MeV neutron equivalent will be presented. The results of these measurements support the interpretation of a double junction effect as the primary responsible for the reduction of gain observed in these devices. The shape and magnitude of electric field was...
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Christian Koffmane (Halbleiterlabor der Max-Planck-Gesellschaft)
The asymmetric electron/positron accelerator SuperKEKB at KEK in Japan is designed to provide an instantaneous luminosity of 8×10$^{35}$ cm$^{-2}$s$^{-1}$ - 40 times higher than that of the KEKB collider. For high-precision track reconstruction,e.g. for measurements of time-dependent CP-violating decays and secondary vertices, the Belle II detector will be equipped with two layers of...
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Jiaguo Zhang (Paul Scherrer Institut (PSI))
The detector group of the Swiss Light Source at the Paul Scherrer Institut (PSI) develops cutting-edge X-ray detectors in-house, including photon-counting detectors for synchrotron radiation sources and charge-integrating detectors for Free-Electron Lasers (FELs). Planar silicon strip and pixel sensors are commonly used for X-ray energies from a few keV up to 20 keV. In addition, high-Z...
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